STP100N6F7 - описание и поиск аналогов

STP100N6F7 N-channel 60 V, 4.7 m typ.,100 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP100N6F7 60 V 5.6 m 100A 125 W TAB Among the lowest RDS(on) on the market 3 Excellent figure of merit (FoM) 2 1 Low Crss/Ciss ratio for EMI immunity TO-220 High avalanche ruggedness Applicati

STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-1 N-channel 30V - 0.0026 - 100A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS(on) ID STB100NF03L-03 30V

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7 N-channel 100 V, 0.0068 typ., 80 A, STripFET VII DeepGATE Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS max ID PTOT 1 3 1 DPAK STB100N10F7 80 A 120 W D2PAK STD100N10F7 80 A 120W TAB 100 V 0.008 STF100N10F7 45 A 30 W STP100N10F7 80A 150 W

STP100NF04L N-CHANNEL 40V - 0.0036 - 100A TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STP100NF04L 40 V

STP100NF04 STB100NF04 N-channel 40V - 0.0043 - 120A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID Pw STP100NF04 40V

STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 m typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages TAB TAB Features 2 3 1 VDS RDS(on) max. ID Order codes Package 3 1 D2PAK DPAK STB100N10F7 80 A D2PAK TAB TAB STD100N10F7 80 A DPAK STF100N10F7 100 V 8.0 m 45 A TO-220FP 3 3 2 3 1 2

STP100N8F6 N-channel 80 V, 0.008 typ., 100 A, STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features TAB Order code VDS RDS(on)max ID PTOT STP100N8F6 80 V 0.009 100A 176 W Very low on-resistance Very low gate charge 3 2 High avalanche ruggedness 1 Low gate drive power loss TO-220 Applications Switching applications F

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP100N10F7 FEATURES Very low on-resistance Very low gate charge 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP100N8F6 FEATURES Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET