STP100N6F7N-channel 60 V, 4.7 m typ.,100 A STripFET F7 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max. ID PTOTSTP100N6F7 60 V 5.6 m 100A 125 WTAB Among the lowest RDS(on) on the market3 Excellent figure of merit (FoM)21 Low Crss/Ciss ratio for EMI immunityTO-220 High avalanche ruggednessApplicati

STP100NF03L-03STB100NF03L-03 STB100NF03L-03-1N-channel 30V - 0.0026 - 100A - D2PAK/I2/TO-220STripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB100NF03L-03 30V

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7N-channel 100 V, 0.0068 typ., 80 A, STripFET VII DeepGATE Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220Datasheet - production dataFeaturesTAB TABRDS(on) 3Order codes VDS max ID PTOT131 DPAKSTB100N10F7 80 A 120 WD2PAKSTD100N10F7 80 A 120WTAB100 V 0.008 STF100N10F7 45 A 30 WSTP100N10F7 80A 150 W

STP100NF04LN-CHANNEL 40V - 0.0036 - 100A TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP100NF04L 40 V

STP100NF04STB100NF04N-channel 40V - 0.0043 - 120A - TO-220 - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTP100NF04 40V

STB100N10F7, STD100N10F7, STF100N10F7STI100N10F7, STP100N10F7DatasheetN-channel 100 V, 6.8 m typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packagesTABTAB Features2 31VDS RDS(on) max. IDOrder codes Package31D2PAK DPAKSTB100N10F7 80 AD2PAKTAB TABSTD100N10F7 80 A DPAKSTF100N10F7 100 V 8.0 m 45 A TO-220FP33231 2

STP100N8F6N-channel 80 V, 0.008 typ., 100 A, STripFET F6 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesTABOrder code VDS RDS(on)max ID PTOTSTP100N8F6 80 V 0.009 100A 176 W Very low on-resistance Very low gate charge32 High avalanche ruggedness 1 Low gate drive power lossTO-220Applications Switching applicationsF

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP100N10F7FEATURESVery low on-resistanceVery low gate charge100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP100N8F6FEATURESVery low on-resistanceVery low gate chargeHigh avalanche ruggednessLow gate drive power loss100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET