ELM34423AA. Аналоги и основные параметры
Наименование производителя: ELM34423AA
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 293 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
Тип корпуса: SOP-8
Аналог (замена) для ELM34423AA
- подборⓘ MOSFET транзистора по параметрам
ELM34423AA даташит
..1. Size:414K elm
elm34423aa.pdf 

Single P-channel MOSFET ELM34423AA-N General description Features ELM34423AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Internal ESD protection is included. Rds(on)
7.1. Size:403K elm
elm34421aa.pdf 

Single P-channel MOSFET ELM34421AA-N General description Features ELM34421AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-15A resistance. Rds(on)
8.1. Size:654K elm
elm34402aa.pdf 

Single N-channel MOSFET ELM34402AA-N General description Features ELM34402AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)
8.2. Size:605K elm
elm34404aa.pdf 

Single N-channel MOSFET ELM34404AA-N General description Features ELM34404AA-N uses advanced trench technology to Vds=60V provide excellent Rds(on), low gate charge and low gate Id=5.5A resistance. Rds(on)
8.3. Size:991K elm
elm34413aa-n.pdf 

Single P-channel MOSFET ELM34413AA-N General description Features ELM34413AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)
8.4. Size:613K elm
elm34411aa.pdf 

Single P-channel MOSFET ELM34411AA-N General description Features ELM34411AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)
8.5. Size:504K elm
elm34400aa.pdf 

Single N-channel MOSFET ELM34400AA-N General description Features ELM34400AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)
8.6. Size:561K elm
elm34417aa.pdf 

Single P-channel MOSFET ELM34417AA-N General description Features ELM34417AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-6A resistance. Rds(on)
8.7. Size:356K elm
elm34414aa.pdf 

Single N-channel MOSFET ELM34414AA-N General description Features ELM34414AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=15A resistance. Rds(on)
8.8. Size:614K elm
elm34415aa.pdf 

Single P-channel MOSFET ELM34415AA-N General description Features ELM34415AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-13A resistance. Rds(on)
8.9. Size:439K elm
elm34418aa.pdf 

Single N-channel MOSFET ELM34418AA-N General description Features ELM34418AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=22A resistance. Rds(on)
8.10. Size:986K elm
elm34403aa-n.pdf 

Single P-channel MOSFET ELM34403AA-N General description Features ELM34403AA-N uses advanced trench technology to Vds=-55V provide excellent Rds(on), low gate charge and low gate Id=-4.5A resistance. Rds(on)
8.11. Size:249K elm
elm34409aa.pdf 

Single P-channel MOSFET ELM34409AA-N General description Features ELM34409AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-9A resistance. Rds(on)
8.12. Size:423K elm
elm34401aa.pdf 

Single P-channel MOSFET ELM34401AA-N General description Features ELM34401AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)
8.13. Size:612K elm
elm34405aa.pdf 

Single P-channel MOSFET ELM34405AA-N General description Features ELM34405AA-N uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-5.5A resistance. Rds(on)
8.14. Size:420K elm
elm34408aa.pdf 

Single N-channel MOSFET ELM34408AA-N General description Features ELM34408AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)
8.15. Size:625K elm
elm34407aa.pdf 

Single P-channel MOSFET ELM34407AA-N General description Features ELM34407AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)
8.16. Size:322K elm
elm34416aa.pdf 

Single N-channel MOSFET ELM34416AA-N General description Features ELM34416AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=11A resistance. Rds(on)
8.17. Size:981K elm
elm34406aa-n.pdf 

Single N-channel MOSFET ELM34406AA-N General description Features ELM34406AA-N uses advanced trench technology to Vds=40V provide excellent Rds(on), low gate charge and low gate Id=7.5A resistance. Rds(on)
Другие MOSFET... ELM34411AA
, ELM34413AA-N
, ELM34414AA
, ELM34415AA
, ELM34416AA
, ELM34417AA
, ELM34418AA
, ELM34421AA
, IRF2807
, ELM34600AA
, ELM34601AA
, ELM34603AA
, ELM34604AA
, ELM34605AA-N
, ELM34608AA
, ELM34801AA
, ELM34802AA-N
.
History: FCPF067N65S3
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