Справочник MOSFET. F20S60C3

 

F20S60C3 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: F20S60C3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 780 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
   Тип корпуса: STO-220
     - подбор MOSFET транзистора по параметрам

 

F20S60C3 Datasheet (PDF)

 ..1. Size:154K  shindengen
f20s60c3.pdfpdf_icon

F20S60C3

P we MOS Eo r F T O T IEU LNUntmmiP cae T 20akgS O-2F 0 6C2S 0 3 6 0 0 0 V2A 000020S60C3 F aueetr L wRoONFsS t at wihncig

 8.1. Size:405K  aosemi
aot20s60 aob20s60 aotf20s60.pdfpdf_icon

F20S60C3

AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin

 8.2. Size:325K  aosemi
aotf20s60l.pdfpdf_icon

F20S60C3

AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin

 8.3. Size:324K  aosemi
aotf20s60.pdfpdf_icon

F20S60C3

AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin

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History: CHM3413KGP | SQ3418EEV | LNG04R165 | SQ7415EN | ISCNH340B | IPZA60R120P7 | GT45N06

 

 
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