Doc No. TT4-EA-14832Revision. 1Product StandardsMOS FETFC8V22150LFC8V22150LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Low drain-source ON resistance:Rds(on) typ. = 9.0 m VGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0

Doc No. TT4-EA-15018Revision. 2Product StandardsMOS FETFC8V22280LFC8V22280LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Source-source ON Resistance:Rss(on) typ. = 9.8 mVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / M

Doc No. TT4-EA-15019Revision. 2Product StandardsMOS FETFC8V22290LFC8V22290LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Source-source ON Resistance:Rss(on) typ. = 11.5 mVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 /

Doc No. TT4-EA-15020Revision. 2Product StandardsMOS FETFC8V22300LFC8V22300LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Source-source ON Resistance:Rss(on) typ. = 15 mWVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:

Doc No. TT4-EA-14490Revision. 3Product StandardsMOS FETFC8V22090LFC8V22090LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Low drain-source ON resistance:Rds(on) typ. = 9.5 m VGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level

This product complies with the RoHS Directive (EU 2002/95/EC).FC8V2204Silicon N-channel MOS FETFor lithium-ion secondary battery protection circuits Overview Package CodeN-channel dual type MOS FET in a compact surface mount type package. WMini8-F1 FeaturesPackage dimension clicks here. Click! Low drain-source ON resistance: RDS(on) typ. = 10.5 mW (VGS = 4

Doc No. TT4-EA-14491Revision. 3Product StandardsMOS FETFC8V22080LFC8V22080LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Low drain-source ON resistance:Rds(on) typ. = 13 mVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1