Справочник MOSFET. FKI07117

 

FKI07117 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FKI07117
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 42 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 54 nC
   trⓘ - Время нарастания: 6.4 ns
   Cossⓘ - Выходная емкость: 370 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0097 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для FKI07117

 

 

FKI07117 Datasheet (PDF)

 ..1. Size:263K  sanken-ele
 fki07117.pdf

FKI07117 FKI07117

75 V, 42 A, 7.2 m Low RDS(ON) N ch Trench Power MOSFET FKI07117 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 42 A RDS(ON) ---------- 9.7 m max. (VGS = 10 V, ID = 31.2 A) Qg ------25.0 nC (VGS = 4.5 V, VDS = 38 V, ID = 31.2 A) Low Total Gate Charge

 ..2. Size:251K  inchange semiconductor
 fki07117.pdf

FKI07117 FKI07117

isc N-Channel MOSFET Transistor FKI07117FEATURESDrain Current I =42A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R =9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 8.1. Size:263K  sanken-ele
 fki07174.pdf

FKI07117 FKI07117

75 V, 31 A, 10.4 m Low RDS(ON) N ch Trench Power MOSFET FKI07174 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 31 A RDS(ON) -------- 14.1 m max. (VGS = 10 V, ID = 22.8 A) Qg ------15.0 nC (VGS = 4.5 V, VDS = 38 V, ID = 22.8 A) Low Total Gate Charge

 8.2. Size:252K  inchange semiconductor
 fki07174.pdf

FKI07117 FKI07117

isc N-Channel MOSFET Transistor FKI07174FEATURESDrain Current I =31A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R =14.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.1. Size:263K  sanken-ele
 fki07076.pdf

FKI07117 FKI07117

75 V, 55 A, 5.3 m Low RDS(ON) N ch Trench Power MOSFET FKI07076 Features Package V(BR)DSS --------------------------------- 75 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 55 A RDS(ON) ---------- 6.9 m max. (VGS = 10 V, ID = 44.0 A) Qg ------42.9 nC (VGS = 4.5 V, VDS = 38 V, ID = 44.0 A) Low Total Gate Charge

 9.2. Size:252K  inchange semiconductor
 fki07076.pdf

FKI07117 FKI07117

isc N-Channel MOSFET Transistor FKI07076FEATURESDrain Current I =55A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R =6.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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