FKI10126 - описание и поиск аналогов

100 V, 41 A, 8.8 m Low RDS(ON) N ch Trench Power MOSFET FKI10126 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 41 A RDS(ON) -------- 12.1 m max. (VGS = 10 V, ID = 33.0 A) Qg ------ 45.2nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A) Low Total Gate Charge

isc N-Channel MOSFET Transistor FKI10126 FEATURES Drain Current I =41A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =12.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

100 V, 31 A, 13.2 m Low RDS(ON) N ch Trench Power MOSFET FKI10198 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 31 A RDS(ON) -------- 18.4 m max. (VGS = 10 V, ID = 23.4 A) Qg ------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A) Low Total Gate Charge

isc N-Channel MOSFET Transistor FKI10198 FEATURES Drain Current I =31A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =18.4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

100 V, 18 A, 34.7 m Low RDS(ON) N ch Trench Power MOSFET FKI10531 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 18 A RDS(ON) -------- 54.5 m max. (VGS = 10 V, ID = 11.9 A) Qg ------- 9.0 nC (VGS = 4.5 V, VDS = 50 V, ID = 11.9 A) Low Total Gate Charge

100 V, 23 A, 20.2 m Low RDS(ON) N ch Trench Power MOSFET FKI10300 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 23 A RDS(ON) -------- 28.8 m max. (VGS = 10 V, ID = 17.1 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A) Low Total Gate Charge

isc N-Channel MOSFET Transistor FKI10300 FEATURES Low drain-source on-resistance RDS(on) 28.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION DC-DC converters Synchronous rectification Power supplies ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

isc N-Channel MOSFET Transistor FKI10531 FEATURES Drain Current I =18A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =54.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos