Справочник MOSFET. FKI10126

 

FKI10126 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FKI10126
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 42 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 41 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 95.6 nC
   trⓘ - Время нарастания: 10.1 ns
   Cossⓘ - Выходная емкость: 465 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0121 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для FKI10126

 

 

FKI10126 Datasheet (PDF)

 ..1. Size:260K  sanken-ele
 fki10126.pdf

FKI10126 FKI10126

100 V, 41 A, 8.8 m Low RDS(ON) N ch Trench Power MOSFET FKI10126 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 41 A RDS(ON) -------- 12.1 m max. (VGS = 10 V, ID = 33.0 A) Qg ------ 45.2nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A) Low Total Gate Charge

 ..2. Size:251K  inchange semiconductor
 fki10126.pdf

FKI10126 FKI10126

isc N-Channel MOSFET Transistor FKI10126FEATURESDrain Current I =41A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =12.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 8.1. Size:260K  sanken-ele
 fki10198.pdf

FKI10126 FKI10126

100 V, 31 A, 13.2 m Low RDS(ON) N ch Trench Power MOSFET FKI10198 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 31 A RDS(ON) -------- 18.4 m max. (VGS = 10 V, ID = 23.4 A) Qg ------27.1 nC (VGS = 4.5 V, VDS = 50 V, ID = 23.4 A) Low Total Gate Charge

 8.2. Size:252K  inchange semiconductor
 fki10198.pdf

FKI10126 FKI10126

isc N-Channel MOSFET Transistor FKI10198FEATURESDrain Current I =31A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =18.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.1. Size:260K  sanken-ele
 fki10531.pdf

FKI10126 FKI10126

100 V, 18 A, 34.7 m Low RDS(ON) N ch Trench Power MOSFET FKI10531 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 18 A RDS(ON) -------- 54.5 m max. (VGS = 10 V, ID = 11.9 A) Qg ------- 9.0 nC (VGS = 4.5 V, VDS = 50 V, ID = 11.9 A) Low Total Gate Charge

 9.2. Size:1101K  sanken-ele
 fki10300.pdf

FKI10126 FKI10126

100 V, 23 A, 20.2 m Low RDS(ON) N ch Trench Power MOSFET FKI10300 Features Package V(BR)DSS -------------------------------- 100 V (ID = 100 A) TO-220F ID ---------------------------------------------------------- 23 A RDS(ON) -------- 28.8 m max. (VGS = 10 V, ID = 17.1 A) Qg ------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A) Low Total Gate Charge

 9.3. Size:245K  inchange semiconductor
 fki10300-220.pdf

FKI10126 FKI10126

isc N-Channel MOSFET Transistor FKI10300FEATURESLow drain-source on-resistance:RDS(on) 28.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDC-DC convertersSynchronous rectificationPower suppliesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

 9.4. Size:252K  inchange semiconductor
 fki10531.pdf

FKI10126 FKI10126

isc N-Channel MOSFET Transistor FKI10531FEATURESDrain Current I =18A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =54.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXFN340N06

 

 
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