HY1606B - описание и поиск аналогов

HY1606P/B N-Channel Enhancement Mode MOSFET Features Pin Description 60V/66A RDS(ON)= 10.4 m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged S Lead Free and Green Devices Available D G (RoHS Compliant) S D G TO-220FB-3L TO-263-2L Applications Switching application Power Management for Inverter Systems. N-Channel MOSFET Ordering and

HY1606P/B N-Channel Enhancement Mode MOSFET Features Pin Description 60V/66A RDS(ON)= 10.4 m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged S Lead Free and Green Devices Available D G (RoHS Compliant) S D G TO-220FB-3L TO-263-2L Applications Switching application Power Management for Inverter Systems. N-Channel MOSFET Ordering and

HY1606D/U/V N-Channel Enhancement Mode MOSFET Features Pin Description 60V/66A, RDS(ON)=10.4 m (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged S D S S Lead Free and Green Devices Available G D D G G (RoHS Compliant) S D G TO-251-3L TO-251-3L TO-252-2L Applications Power Management for Inverter Systems. N-Channel MOSFET Ordering and Marki

HY1607D/U/V N-Channel Enhancement Mode MOSFET Features Pin Description 68V/70A RDS(ON)= 6.8m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged S D G Lead Free and Green Devices Available S D (RoHS Compliant) G TO-252-2L TO-251-3L Applications Power Management for Inverter Systems. N-Channel MOSFET Ordering and Marking Information Package Cod

HY1603D/U/S N-Channel Enhancement Mode MOSFET Features Pin Description 30V/62A, RDS(ON)= 4.0m (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge S S D Excellent CdV/dt effect decline D G G Advanced high cell density Trench technology S D G Halogen - Free Device Available TO-251-3L TO-251-3L TO-252-2L Applications D High Frequency Synchronous Buck

S D G S D G S S D D G G TO-220FB-3L TO-220FB-3M TO-263-2L TO-3PM-3L S D G S S D

HY1603P/B N-Channel Enhancement Mode MOSFET Features Pin Description 30V/62A, RDS(ON)= 4.8m (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline S D Advanced high cell density Trench technology G Halogen - Free Device Available S D G TO-263-2L TO-263-2L TO-220FB-3L TO-220FB-3L Applications D High Frequency Synchronous

HY1607P N-Channel Enhancement Mode MOSFET Features Pin Description 68V/70A RDS(ON)= 6.5m (typ.) @ VGS=10V 100% avalanche tested G D Reliable and Rugged S Lead Free and Green Devices Available D (RoHS Compliant) Applications G Switching application Power Management for Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code P T