Preliminary Data Sheet R07DS0554EJ0100N0412N Rev.1.00Nov 07, 2011N-CHANNEL MOSFET FOR SWITCHING Description The N0412N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS (on) = 3.7 m MAX. (VGS = 10 V, ID = 50 A) Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V) H

A Product Line ofDiodes IncorporatedZXTN04120HP5 120V NPN MEDIUM POWER DARLINGTON TRANSISTOR IN POWERDI5 Features Mechanical Data BVCEO > 120V Case: POWERDI5 BVCBO > 140V Case Material: Molded Plastic, "Green" Molding Compound. IC = 1.5A High Continuous current UL Flammability Classification Rating 94V-0 hFE > 2k for High Gain @ 1A Moisture Sensitivi

A Product Line ofDiodes IncorporatedZXTN04120HK 120V NPN MEDIUM POWER DARLINGTON TRANSISTOR IN TO252 Features Mechanical Data Case: TO252 (DPAK) BVCEO > 120V Case Material: Molded Plastic, "Green" Molding Compound. BVCBO > 140V UL Flammability Classification Rating 94V-0 IC = 1.5A High Continuous current Moisture Sensitivity: Level 1 per J-STD-020