NTB75N03R - описание и поиск аналогов

 

NTB75N03R. Аналоги и основные параметры

Наименование производителя: NTB75N03R

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 74.4 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 1.3 ns

Cossⓘ - Выходная емкость: 600 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm

Тип корпуса: D2PAK

Аналог (замена) для NTB75N03R

- подборⓘ MOSFET транзистора по параметрам

 

NTB75N03R даташит

 ..1. Size:91K  onsemi
ntb75n03r ntb75n03r ntp75n03r ntp75n03r.pdfpdf_icon

NTB75N03R

NTB75N03R, NTP75N03R Power MOSFET 75 Amps, 25 Volts N-Channel D2PAK, TO-220 Features http //onsemi.com Planar HD3e Process for Fast Switching Performance 75 AMPERES Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss 25 VOLTS Low Gate Charge RDS(on) = 5.6 mW (Typ) Pb-Free Packages are Available 4 MAXIMUM RATINGS (TJ = 25 C Unless otherwis

 6.1. Size:74K  onsemi
ntb75n03-006 ntp75n03-06 ntb75n03-06 ntp75n03-6g.pdfpdf_icon

NTB75N03R

NTP75N03-06, NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N-Channel TO-220 and D2PAK http //onsemi.com This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides the best of design available today in a low V(BR)DSS RDS(on) TYP ID MAX cost power package. This power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The 30

 6.2. Size:72K  onsemi
ntb75n03l09t4 ntp75n03l09 ntp75n03l09 ntb75n03l09.pdfpdf_icon

NTB75N03R

NTP75N03L09, NTB75N03L09 Power MOSFET 75 Amps, 30 Volts N-Channel TO-220 and D2PAK http //onsemi.com This Logic Level Vertical Power MOSFET is a general purpose part 75 AMPERES, 30 VOLTS that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. RDS(on) = 8 mW The drain-to-source diode has a ideal fas

 7.1. Size:79K  onsemi
ntb75n06g ntp75n06 ntp75n06 ntb75n06.pdfpdf_icon

NTB75N03R

NTP75N06, NTB75N06 Power MOSFET 75 Amps, 60 Volts, N-Channel TO-220 and D2PAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. 75 AMPERES, 60 VOLTS Features RDS(on) = 9.5 mW Pb-Free Packages are Available N-Channel D Typical Applications Power Supplies Converters

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History: UPA2792AGR | UPA2813T1L | UPA2815T1S | UPA2794AGR

 

 

 

 

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