NTD2955-1G datasheet, аналоги, основные параметры
Наименование производителя: NTD2955-1G 📄📄
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 55 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 150 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
Тип корпуса: DPAK
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Аналог (замена) для NTD2955-1G
- подборⓘ MOSFET транзистора по параметрам
NTD2955-1G даташит
ntd2955-1g ntd2955g.pdf
NTD2955, NTD2955P, NVD2955 Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the http //onsemi.com avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power V(BR)DSS RDS(on) TYP ID MAX motor controls. These devices are particularly well suited for bridge -60 V
ntd2955-p.pdf
NTD2955, NTD2955P Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power http //onsemi.com motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating
ntd2955.pdf
NTD2955 Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power http //onsemi.com motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe opera
ntd2955 nvd2955.pdf
NTD2955, NVD2955 Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power http //onsemi.com motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating sa
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Параметры MOSFET. Взаимосвязь и компромиссы
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