Справочник MOSFET. NTD4809NA-1G

 

NTD4809NA-1G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTD4809NA-1G
   Маркировка: 4809N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 52 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 58 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 11 nC
   trⓘ - Время нарастания: 21.3 ns
   Cossⓘ - Выходная емкость: 315 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: DPAK IPAK

 Аналог (замена) для NTD4809NA-1G

 

 

NTD4809NA-1G Datasheet (PDF)

 ..1. Size:110K  onsemi
 ntd4809na-1g.pdf

NTD4809NA-1G NTD4809NA-1G

NTD4809NAAdvance InformationPower MOSFET25 V, 58 A, Single N- Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices9.0 mW @ 10 V25 V 58 AApplications14 mW @ 4.5 V CPU Power D

 6.1. Size:150K  onsemi
 ntd4809n-1g.pdf

NTD4809NA-1G NTD4809NA-1G

NTD4809NPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 mW @ 10 V CPU Power Delivery30 V 58 A14 mW @ 4.5 V DC-DC Conv

 6.2. Size:117K  onsemi
 ntd4809n nvd4809n.pdf

NTD4809NA-1G NTD4809NA-1G

NTD4809N, NVD4809NPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 mW @ 10 V30 V 58 A

 6.3. Size:330K  onsemi
 ntd4809nhg.pdf

NTD4809NA-1G NTD4809NA-1G

NTD4809NHPower MOSFET30 V, 58 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 m @10V30 V 58 A CPU Power Delivery12.5 m @4.5 V DC--DC

 6.4. Size:270K  onsemi
 ntd4809n-d.pdf

NTD4809NA-1G NTD4809NA-1G

NTD4809NPower MOSFET30 V, 58 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 m @10V CPU Power Delivery30 V 58 A14 m @4.5 V DC--DC Co

 6.5. Size:153K  onsemi
 ntd4809nh-1g.pdf

NTD4809NA-1G NTD4809NA-1G

NTD4809NH, NVD4809NHPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4809NHV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 m

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History: 10N40 | 12N80G-TA3-T | SSR2N60A | 11NM70L-TA3-T

 

 
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