Справочник MOSFET. NTD4809NH-1G

 

NTD4809NH-1G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NTD4809NH-1G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 52 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 58 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 331 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: DPAK IPAK
 
   - подбор ⓘ MOSFET транзистора по параметрам

 

NTD4809NH-1G Datasheet (PDF)

 ..1. Size:153K  onsemi
 ntd4809nh-1g.pdf pdf_icon

NTD4809NH-1G

NTD4809NH, NVD4809NHPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4809NHV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 m

 5.1. Size:330K  onsemi
 ntd4809nhg.pdf pdf_icon

NTD4809NH-1G

NTD4809NHPower MOSFET30 V, 58 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 m @10V30 V 58 A CPU Power Delivery12.5 m @4.5 V DC--DC

 6.1. Size:150K  onsemi
 ntd4809n-1g.pdf pdf_icon

NTD4809NH-1G

NTD4809NPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 mW @ 10 V CPU Power Delivery30 V 58 A14 mW @ 4.5 V DC-DC Conv

 6.2. Size:117K  onsemi
 ntd4809n nvd4809n.pdf pdf_icon

NTD4809NH-1G

NTD4809N, NVD4809NPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 mW @ 10 V30 V 58 A

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NTD4302-1G , NTD4804N-1G , NTD4804NA-1G , NTD4805N-1G , NTD4805NT4G , NTD4806N-1G , NTD4809N-1G , NTD4809NA-1G , IRF530 , NTD4810N-1G , NTD4810NH-1G , NTD4813N-1G , NTD4813NH-1G , NTD4815N-1G , NTD4815NH-1G , NTD4815NT4G , NTD4854N-1G .

History: MDZ1N60UMH

 

 
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