Справочник MOSFET. NTD4865N-1G

 

NTD4865N-1G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NTD4865N-1G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 33.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 44 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 24.6 ns
   Cossⓘ - Выходная емкость: 223 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0109 Ohm
   Тип корпуса: DPAK IPAK
     - подбор MOSFET транзистора по параметрам

 

NTD4865N-1G Datasheet (PDF)

 ..1. Size:308K  onsemi
 ntd4865n-1g.pdf pdf_icon

NTD4865N-1G

NTD4865NPower MOSFET25 V, 44 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices10.9 m @10V25 V44 AApplications17.2 m @4.5 V VCORE

 6.1. Size:100K  onsemi
 ntd4865n.pdf pdf_icon

NTD4865N-1G

NTD4865NPower MOSFET25 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices10.9 mW @ 10 V25 V44 AApplications17.2 mW @ 4.5 V VCORE A

 8.1. Size:296K  onsemi
 ntd4863n-1g ntd4863n-d.pdf pdf_icon

NTD4865N-1G

NTD4863NPower MOSFET25 V, 49 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices9.3 m @10V25 V49 AApplications14 m @4.5 V VCORE App

 8.2. Size:118K  onsemi
 ntd4860n.pdf pdf_icon

NTD4865N-1G

NTD4860NPower MOSFET25 V, 65 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices7.5 mW @ 10 V25 V65 A11.1 mW @ 4.5 VApplications VCORE App

ПОКАЗАТЬ ЕЩЁ

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History: AP60SL150AR | IXTT360N055T2 | WMK18N50C4 | AFN1932 | IXFK94N50P2 | SVF6N25CD | KRF7401

 

 
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