NTD4865N-1G. Аналоги и основные параметры
Наименование производителя: NTD4865N-1G
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 33.3 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 44 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 24.6 ns
Cossⓘ - Выходная емкость: 223 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0109 Ohm
Аналог (замена) для NTD4865N-1G
- подборⓘ MOSFET транзистора по параметрам
NTD4865N-1G даташит
ntd4865n-1g.pdf
NTD4865N Power MOSFET 25 V, 44 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 10.9 m @10V 25 V 44 A Applications 17.2 m @4.5 V VCORE
ntd4865n.pdf
NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 10.9 mW @ 10 V 25 V 44 A Applications 17.2 mW @ 4.5 V VCORE A
ntd4863n-1g ntd4863n-d.pdf
NTD4863N Power MOSFET 25 V, 49 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 9.3 m @10V 25 V 49 A Applications 14 m @4.5 V VCORE App
ntd4860n.pdf
NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 7.5 mW @ 10 V 25 V 65 A 11.1 mW @ 4.5 V Applications VCORE App
Другие MOSFET... NTD4815NT4G , NTD4854N-1G , NTD4855N-1G , NTD4856N-1G , NTD4857N-1G , NTD4858N-1G , NTD4860N-1G , NTD4863N-1G , 2SK3568 , NTD4904N-1G , NTD4909N-1G , NTD4910N-1G , NTD4960N-1G , NTD4963N-1G , NTD4965N-1G , NTD4969N-1G , NTD4970N-1G .
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Список транзисторов
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