NTD5414NT4G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTD5414NT4G
Маркировка: 5414N
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 55 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 25 nC
trⓘ - Время нарастания: 58 ns
Cossⓘ - Выходная емкость: 165 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.037 Ohm
Тип корпуса: DPAK
Аналог (замена) для NTD5414NT4G
NTD5414NT4G Datasheet (PDF)
ntd5414nt4g.pdf
NTD5414NPower MOSFET24 Amps, 60 Volts Single N-ChannelDPAKFeatures Low RDS(on)http://onsemi.com High Current Capability Avalanche Energy SpecifiedID MAX These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX (Note 1)Applications60 V 37 mW @ 10 V 24 A LED Lighting and LED Backlight Drivers DC-DC ConvertersN-Channel DC Motor DriversD Power Supp
ntd5414n.pdf
NTD5414NPower MOSFET24 Amps, 60 Volts Single N-ChannelDPAKFeatures Low RDS(on)http://onsemi.com High Current Capability Avalanche Energy SpecifiedID MAX These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX (Note 1)Applications60 V 37 mW @ 10 V 24 A LED Lighting and LED Backlight Drivers DC-DC ConvertersN-Channel DC Motor DriversD Power Supp
ntd5413n ntd5413nt4g.pdf
NTD5413NPower MOSFET30 Amps, 60 Volts Single N-ChannelDPAKFeatures Low RDS(on)http://onsemi.com High Current Capability Avalanche Energy SpecifiedID MAX These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX (Note 1)Applications60 V 26 mW @ 10 V 30 A LED Lighting and LED Backlight Drivers DC-DC ConvertersN-Channel DC Motor DriversD Switch Mod
ntd5406n.pdf
NTD5406NPower MOSFET40 V, 70 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) TYP (Note 1)Applications40 V 8.7 m @ 10 V 70 A Electronic Brake Systems Electronic Power Steering Bridge CircuitsN-ChannelDMAXIMUM RATINGS (TJ = 25C unless
ntd5407ng std5407nt4g.pdf
NTD5407N, STD5407NPower MOSFET40 V, 38 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge AEC Q101 Qualified - STD5407NID MAXV(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant40 V 21 mW @ 10 V 38 AApplications Electronic Brake Systems Electronic Power SteeringN-Ch
ntd5407n.pdf
NTD5407NPower MOSFET40 V, 38 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) TYP (Note 1)Applications40 V 21 mW @ 10 V 38 A Electronic Brake Systems Electronic Power Steering Bridge CircuitsN-ChannelDMAXIMUM RATINGS (TJ = 25C unless ot
ntd5406ng std5406nt4g.pdf
NTD5406N, STD5406NPower MOSFET40 V, 70 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge AEC Q101 Qualified - STD5406NID MAXV(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant40 V 8.7 m @ 10 V 70 AApplications Electronic Brake Systems Electronic Power SteeringN-
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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