Справочник MOSFET. NTD5414NT4G

 

NTD5414NT4G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTD5414NT4G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 55 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 58 ns
   Cossⓘ - Выходная емкость: 165 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.037 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для NTD5414NT4G

 

 

NTD5414NT4G Datasheet (PDF)

 ..1. Size:104K  onsemi
 ntd5414nt4g.pdf

NTD5414NT4G NTD5414NT4G

NTD5414NPower MOSFET24 Amps, 60 Volts Single N-ChannelDPAKFeatures Low RDS(on)http://onsemi.com High Current Capability Avalanche Energy SpecifiedID MAX These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX (Note 1)Applications60 V 37 mW @ 10 V 24 A LED Lighting and LED Backlight Drivers DC-DC ConvertersN-Channel DC Motor DriversD Power Supp

 6.1. Size:103K  onsemi
 ntd5414n.pdf

NTD5414NT4G NTD5414NT4G

NTD5414NPower MOSFET24 Amps, 60 Volts Single N-ChannelDPAKFeatures Low RDS(on)http://onsemi.com High Current Capability Avalanche Energy SpecifiedID MAX These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX (Note 1)Applications60 V 37 mW @ 10 V 24 A LED Lighting and LED Backlight Drivers DC-DC ConvertersN-Channel DC Motor DriversD Power Supp

 8.1. Size:103K  onsemi
 ntd5413n ntd5413nt4g.pdf

NTD5414NT4G NTD5414NT4G

NTD5413NPower MOSFET30 Amps, 60 Volts Single N-ChannelDPAKFeatures Low RDS(on)http://onsemi.com High Current Capability Avalanche Energy SpecifiedID MAX These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX (Note 1)Applications60 V 26 mW @ 10 V 30 A LED Lighting and LED Backlight Drivers DC-DC ConvertersN-Channel DC Motor DriversD Switch Mod

 9.1. Size:120K  onsemi
 ntd5406n.pdf

NTD5414NT4G NTD5414NT4G

NTD5406NPower MOSFET40 V, 70 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) TYP (Note 1)Applications40 V 8.7 m @ 10 V 70 A Electronic Brake Systems Electronic Power Steering Bridge CircuitsN-ChannelDMAXIMUM RATINGS (TJ = 25C unless

 9.2. Size:135K  onsemi
 ntd5407ng std5407nt4g.pdf

NTD5414NT4G NTD5414NT4G

NTD5407N, STD5407NPower MOSFET40 V, 38 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge AEC Q101 Qualified - STD5407NID MAXV(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant40 V 21 mW @ 10 V 38 AApplications Electronic Brake Systems Electronic Power SteeringN-Ch

 9.3. Size:120K  onsemi
 ntd5407n.pdf

NTD5414NT4G NTD5414NT4G

NTD5407NPower MOSFET40 V, 38 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) TYP (Note 1)Applications40 V 21 mW @ 10 V 38 A Electronic Brake Systems Electronic Power Steering Bridge CircuitsN-ChannelDMAXIMUM RATINGS (TJ = 25C unless ot

 9.4. Size:136K  onsemi
 ntd5406ng std5406nt4g.pdf

NTD5414NT4G NTD5414NT4G

NTD5406N, STD5406NPower MOSFET40 V, 70 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge AEC Q101 Qualified - STD5406NID MAXV(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant40 V 8.7 m @ 10 V 70 AApplications Electronic Brake Systems Electronic Power SteeringN-

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