TSF65R300S1 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TSF65R300S1
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 32 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 340 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
Тип корпуса: TO220F
Аналог (замена) для TSF65R300S1
TSF65R300S1 Datasheet (PDF)
tsf65r300s1.pdf

TSF65R300S1 650V 15A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family 700V @TJ = 150 that is utilizing an advanced charge balance mechanism for outstanding Typ. RDS(on) = 0.26low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction Ultr
tsf65r360s2.pdf

TSF65R360S2650V 15A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family 700V @TJ = 150 that is utilizing an advanced charge balance mechanism for outstanding Typ. RDS(on) = 0.34low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction Ult
tsf65r190s2 tsp65r190s2 tsa65r190s2 tsk65r190s2.pdf

May, 2018SJ-FETTSF65R190S2/TSP65R190S2/TSA65R190S2/TSK65R190S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge balance mechanism for outstanding 700V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16T
tsf65r190s2 tsp65r190s2.pdf

May, 2018SJ-FETTSF65R190S2/TSP65R190S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge balance mechanism for outstanding 700V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16This advanced technology
Другие MOSFET... SP8M3 , SPP80N06S2-09 , SPB80N06S2-09 , SST4091 , SST4092 , SST4093 , SVF2N65F , TPHR8504PL , IRF740 , UFZ24NL-TA3 , UFZ24NL-TM3 , UFZ24NL-TN3 , NTD5865N-1G , NTD5867NL-1G , NTD60N02R , NTD60N02R-035 , NTD60N03-001 .
History: SSM6N36FE | SWW20N65K | 2SK2713 | 2SK322 | QM2415K | ZXM62P02E6 | NTMFS4946N
History: SSM6N36FE | SWW20N65K | 2SK2713 | 2SK322 | QM2415K | ZXM62P02E6 | NTMFS4946N



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