TSF65R300S1. Аналоги и основные параметры
Наименование производителя: TSF65R300S1
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 32 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 340 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
Тип корпуса: TO220F
Аналог (замена) для TSF65R300S1
- подборⓘ MOSFET транзистора по параметрам
TSF65R300S1 даташит
tsf65r300s1.pdf
TSF65R300S1 650V 15A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family 700V @TJ = 150 that is utilizing an advanced charge balance mechanism for outstanding Typ. RDS(on) = 0.26 low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction Ultr
tsf65r360s2.pdf
TSF65R360S2 650V 15A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family 700V @TJ = 150 that is utilizing an advanced charge balance mechanism for outstanding Typ. RDS(on) = 0.34 low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction Ult
tsf65r190s2 tsp65r190s2 tsa65r190s2 tsk65r190s2.pdf
May, 2018 SJ-FET TSF65R190S2/TSP65R190S2/TSA65R190S2/TSK65R190S2 650V N-Channel Super-Junction MOSFET Gen- Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizing an advanced charge balance mechanism for outstanding 700V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16 T
tsf65r190s2 tsp65r190s2.pdf
May, 2018 SJ-FET TSF65R190S2/TSP65R190S2 650V N-Channel Super-Junction MOSFET Gen- Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizing an advanced charge balance mechanism for outstanding 700V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16 This advanced technology
Другие MOSFET... SP8M3 , SPP80N06S2-09 , SPB80N06S2-09 , SST4091 , SST4092 , SST4093 , SVF2N65F , TPHR8504PL , IRF740 , UFZ24NL-TA3 , UFZ24NL-TM3 , UFZ24NL-TN3 , NTD5865N-1G , NTD5867NL-1G , NTD60N02R , NTD60N02R-035 , NTD60N03-001 .
History: WSK140N08 | NTMD5838NL | UPA1727G | WM03P27M | SE80130GA | AO3401MI-MS | SE30150
History: WSK140N08 | NTMD5838NL | UPA1727G | WM03P27M | SE80130GA | AO3401MI-MS | SE30150
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