TSF65R300S1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TSF65R300S1
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 32 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 43 nC
trⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 340 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
Тип корпуса: TO220F
Аналог (замена) для TSF65R300S1
TSF65R300S1 Datasheet (PDF)
tsf65r300s1.pdf
TSF65R300S1 650V 15A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family 700V @TJ = 150 that is utilizing an advanced charge balance mechanism for outstanding Typ. RDS(on) = 0.26low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction Ultr
tsf65r360s2.pdf
TSF65R360S2650V 15A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family 700V @TJ = 150 that is utilizing an advanced charge balance mechanism for outstanding Typ. RDS(on) = 0.34low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction Ult
tsf65r190s2 tsp65r190s2 tsa65r190s2 tsk65r190s2.pdf
May, 2018SJ-FETTSF65R190S2/TSP65R190S2/TSA65R190S2/TSK65R190S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge balance mechanism for outstanding 700V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16T
tsf65r190s2 tsp65r190s2.pdf
May, 2018SJ-FETTSF65R190S2/TSP65R190S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge balance mechanism for outstanding 700V @TJ = 150 low on-resistance and lower gate charge performance. Typ. RDS(on) = 0.16This advanced technology
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
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