NTD5865N-1G - описание и поиск аналогов

NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching http //onsemi.com High Current Capability 100% Avalanche Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant 60 V 18 mW @ 10 V 38 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit D Drain-to-Sou

NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching http //onsemi.com High Current Capability 100% Avalanche Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant 60 V 18 mW @ 10 V 38 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit D Drain-to-Sou

NTD5865NL N--Channel Power MOSFET 60 V, 40 A, 16 m Features Low Gate Charge Fast Switching http //onsemi.com High Current Capability 100% Avalanche Tested V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb--Free, Halogen Free and are RoHS Compliant 16 m @10V MAXIMUM RATINGS (TJ =25 C unless otherwise noted) 60 V 40 A 19 m @4.5 V Parameter Symbol Value Uni

NTD5865NL-1G www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 55 Material categorization 60 0.012 at VGS = 4.5 V 47 TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Sy

NTD5865NLT4G www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Lim