NTD6414AN-1G - описание и поиск аналогов

NTD6414AN, NVD6414AN N-Channel Power MOSFET 100 V, 32 A, 37 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested AEC Q101 Qualified - NVD6414AN ID MAX These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 100 V 37 mW @ 10 V 32 A Parameter Symbol Value

NTD6414AN N-Channel Power MOSFET 100 V, 32 A, 37 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS ID MAX Compliant V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 100 V 37 mW @ 10 V 32 A Parameter Symbol Value Unit Drain-to-Source

NTD6414AN, NVD6414AN MOSFET Power, N-Channel 100 V, 32 A, 37 mW Features http //onsemi.com Low RDS(on) High Current Capability ID MAX 100% Avalanche Tested V(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring 100 V 37 mW @ 10 V 32 A Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These De

NTD6415ANL N--Channel Power MOSFET 100 V, 23 A, 56 m , Logic Level Features Low RDS(on) http //onsemi.com 100% Avalanche Tested AEC--Q101 Qualified V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant 56 m @4.5 V 100 V 23 A 52 m @10V MAXIMUM RATINGS (TJ =25 C unless otherwise noted) Parameter Symbol Value Uni

NTD6415AN, NVD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested AEC Q101 Qualified - NVD6415AN ID MAX These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 100 V 55 mW @ 10 V 23 A Parameter Symbol Value

NTD6416AN, NVD6416AN MOSFET Power, N-Channel 100 V, 17 A, 81 mW Features http //onsemi.com Low RDS(on) High Current Capability ID MAX 100% Avalanche Tested V(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring 100 V 81 mW @ 10 V 17 A Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These De

NTD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS ID MAX Compliant V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 100 V 81 mW @ 10 V 17 A Parameter Symbol Value Unit Drain-to-Source

NTD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS Compliant ID MAX V(BR)DSS RDS(on) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit 100 V 55 mW @ 10 V 23 A Drain-to-Source Voltage VDSS 100 V Gate

NTD6416AN, NVD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested AEC Q101 Qualified - NVD616AN ID MAX These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX (Note 1) 100 V 81 mW @ 10 V 17 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value

NTD6416ANL N-Channel Power MOSFET 100 V, 19 A, 74 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 100 V 74 mW @ 10 V 19 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V D Gate-to-Source Voltage - Continuo

NTD6416ANL, NVD6416ANL N-Channel Power MOSFET 100 V, 19 A, 74 mW Features Low RDS(on) www.onsemi.com High Current Capability 100% Avalanche Tested V(BR)DSS RDS(on) MAX ID MAX NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 100 V 74 mW @ 10 V 19 A Qualified and PPAP Capable These Devices are Pb-Free

NTD6415ANL, NVD6415ANL N-Channel Power MOSFET 100 V, 23 A, 56 mW, Logic Level Features Low RDS(on) www.onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 56 mW @ 4.5 V 100 V 23 A These Devices are Pb-Free and are RoHS

NTD6416ANT www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100 % UIS tested 0.055 at VGS = 10 V 25 0.057 at VGS = 4.5 V 100 25 21nC 0.070 at VGS = 2.5 V 18 APPLICATIONS Primary side switch D TO-252 G G D S S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, un