Справочник MOSFET. 2SK1085-M

 

2SK1085-M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK1085-M
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 20 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 60 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для 2SK1085-M

 

 

2SK1085-M Datasheet (PDF)

 ..1. Size:175K  fuji
 2sk1085-m.pdf

2SK1085-M 2SK1085-M

N-channel MOS-FET2SK1085-MF-III Series 150V 0,9 3A 20W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),

 ..2. Size:200K  inchange semiconductor
 2sk1085-m.pdf

2SK1085-M 2SK1085-M

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK1085-MFEATURESWith TO-220F packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 8.1. Size:165K  fuji
 2sk1081-01.pdf

2SK1085-M 2SK1085-M

 8.2. Size:183K  fuji
 2sk1089.pdf

2SK1085-M 2SK1085-M

N-channel MOS-FET2SK1089F-III Series 60V 0,035 35A 80W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),

 8.3. Size:143K  fuji
 2sk1086.pdf

2SK1085-M 2SK1085-M

 8.4. Size:1246K  fuji
 2sk1082.pdf

2SK1085-M 2SK1085-M

 8.5. Size:163K  fuji
 2sk1082-01.pdf

2SK1085-M 2SK1085-M

 8.6. Size:203K  inchange semiconductor
 2sk1081.pdf

2SK1085-M 2SK1085-M

isc N-Channel MOSFET Transistor 2SK1081DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 8

 8.7. Size:203K  inchange semiconductor
 2sk1082.pdf

2SK1085-M 2SK1085-M

isc N-Channel MOSFET Transistor 2SK1082DESCRIPTIONDrain Current I =6A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 9

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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