Справочник MOSFET. FCP099N65S3

 

FCP099N65S3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FCP099N65S3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 227 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 61 nC
   trⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 55 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.099 Ohm
   Тип корпуса: TO220

 Аналог (замена) для FCP099N65S3

 

 

FCP099N65S3 Datasheet (PDF)

 ..1. Size:376K  onsemi
fcp099n65s3.pdf

FCP099N65S3
FCP099N65S3

FCP099N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 30 A, 99 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 99 mW @ 10 V 30 Acharge performance. This advanced

 ..2. Size:206K  inchange semiconductor
fcp099n65s3.pdf

FCP099N65S3
FCP099N65S3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCP099N65S3FEATURESWith TO-220 packagingLow switching lossUltra low gate chargeEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible power supplyABSOLUTE MAXIMUM RAT

 6.1. Size:763K  1
fcp099n60e.pdf

FCP099N65S3
FCP099N65S3

June 2016FCP099N60EN-Channel SuperFET II Easy-Drive MOSFET600 V, 37 A, 99 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 87 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 88nC)

 6.2. Size:806K  onsemi
fcp099n60e.pdf

FCP099N65S3
FCP099N65S3

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.3. Size:257K  inchange semiconductor
fcp099n60e.pdf

FCP099N65S3
FCP099N65S3

isc N-Channel MOSFET Transistor FCP099N60EFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

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