IPA041N04N - описание и поиск аналогов

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA041N04N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 3 Power-Transistor, 40 V IPA041N04N G Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 3 Power-Transistor, 40 V IPA041N04N G TO-220-FP 1 Description Features Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel, normal l

IPA040N08NM5S MOSFET PG-TO 220 FP OptiMOSTM 5 Power-Transistor, 80 V Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Qualified

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IPA040N06NM5S MOSFET PG-TO 220 FP OptiMOSTM 5 Power-Transistor, 60 V Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Qualified

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPA040N06N Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOSTM Power-Transistor, 60 V IPA040N06N TO-220-FP 1 Description Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA040N06N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS

isc N-Channel MOSFET Transistor IPA045N10N3,IIPA045N10N3 FEATURES Low drain-source on-resistance RDS(on) 4.5m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY