IRFI3306G - описание и поиск аналогов

IRFI3306GPbF HEXFET Power MOSFET Applications VDSS 60V High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply RDS(on) typ. 3.3m High Speed Power Switching max. 4.2m Hard Switched and High Frequency Circuits ID 71A Benefits D Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacit

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI3306G FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(

PD - 95040A IRFI3205PbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.008 G l Fully Avalanche Rated l Lead-Free ID = 64A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

PD - 97764 AUTOMOTIVE GRADE AUIRFI3205 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V(BR)DSS 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) max. 0.008 Sink to Lead Creepage Distance = 4.8mm 175 C Operating Temperature ID 64A Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualifi

PD - 9.1374B IRFI3205 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.008 Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 64A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

PD - 9.1387B IRFI3710 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.025 Fully Avalanche Rated G Description ID = 32A Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve extremely low on-r

IRFI3205PbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Isolated Package VDSS 55V High Voltage Isolation = 2.5KVRMS RDS(on) 0.008 Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated ID 64A Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI3205 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T