IRFI7536G - описание и поиск аналогов

IRFI7536GPbF HEXFET Power MOSFET Applications VDSS 60V High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply RDS(on) typ. 2.7m High Speed Power Switching Hard Switched and High Frequency Circuits RDS(on) max. 3.4m ID 86A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capaci

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI7536G FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(

PD - 94855 IRFI744GPbF Lead-Free 11/19/03 Document Number 91157 www.vishay.com 1 IRFI744GPbF Document Number 91157 www.vishay.com 2 IRFI744GPbF Document Number 91157 www.vishay.com 3 IRFI744GPbF Document Number 91157 www.vishay.com 4 IRFI744GPbF Document Number 91157 www.vishay.com 5 IRFI744GPbF Document Number 91157 www.vishay.com 6 IRFI744GPbF Document Nu

PD - 94854 IRFI740GPbF Lead-Free 11/19/03 Document Number 91156 www.vishay.com 1 IRFI740GPbF Document Number 91156 www.vishay.com 2 IRFI740GPbF Document Number 91156 www.vishay.com 3 IRFI740GPbF Document Number 91156 www.vishay.com 4 IRFI740GPbF Document Number 91156 www.vishay.com 5 IRFI740GPbF Document Number 91156 www.vishay.com 6 IRFI740GPbF TO-220 Full

PD- 95752 IRFI734GPbF Lead-Free 8/23/04 Document Number 91154 www.vishay.com 1 IRFI734GPbF Document Number 91154 www.vishay.com 2 IRFI734GPbF Document Number 91154 www.vishay.com 3 IRFI734GPbF Document Number 91154 www.vishay.com 4 IRFI734GPbF Document Number 91154 www.vishay.com 5 IRFI734GPbF Document Number 91154 www.vishay.com 6 IRFI734GPbF Peak Diode Re

StrongIRFET IRFI7440GPbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 40V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.0m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 2.5m Resonant mode power supplies S OR-ing and redu

StrongIRFET IRFI7446GPbF HEXFET Power MOSFET Application Brushed motor drive applications D VDSS 40V BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.3m Resonant mode power supplies S OR-ing and redu

PD - 94987 IRFI730GPbF Lead-Free 2/9/04 Document Number 91153 www.vishay.com 1 IRFI730GPbF Document Number 91153 www.vishay.com 2 IRFI730GPbF Document Number 91153 www.vishay.com 3 IRFI730GPbF Document Number 91153 www.vishay.com 4 IRFI730GPbF Document Number 91153 www.vishay.com 5 IRFI730GPbF Document Number 91153 www.vishay.com 6 IRFI730GPbF TO-220 Full-P

November 2001 IRFW740B / IRFI740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tailored to

November 2001 IRFW720B / IRFI720B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to

November 2001 IRFW710B / IRFI710B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.7 nC) planar, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially tailored t

IRFI740G, SiHFI740G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.55 f = 60 Hz) RoHS* Qg (Max.) (nC) 66 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 33 Low Thermal Resistance Configuration Sin

IRFI744G, SiHFI744G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 450 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.63 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 80 Sink to Lead Creepage Dist. = 4.8 mm Qgs (nC) 12 Dynamic dV/dt Rating Qgd (nC) 41 Low Thermal Resistance Lead (Pb)-free Av

IRFI730G, SiHFI730G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 1.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 38 Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qgs (nC) 5.7 Dynamic dV/dt Rating Qgd (nC) 22 Low Thermal Resistance Lead (Pb)-free

IRFI720G, SiHFI720G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 1.8 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 20 COMPLIANT Dynamic dV/dt Rating Qgs (nC) 3.3 Low Thermal Resistance Qgd (nC) 11 Lead (Pb)-fre

IRFI740GLC, SiHFI740GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.55 Enhanced 30 V VGS Rating RoHS* Isolated Package Qg (Max.) (nC) 39 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s, Qgs (nC) 10 f = 60 Hz) Qgd (nC) 19 Sink to Lead C

IRFI734G, SiHFI734G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 450 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = 10 V 1.2 Sink to Lead Creepage Dist. 4.8 mm Qg (Max.) (nC) 45 Dynamic dV/dt Qgs (nC) 6.6 Low Thermal Resistance Qgd (nC) 24 Lead (Pb)-free Configuration Single DESCRIPTION D

IRFI744G, SiHFI744G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 450 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.63 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 80 Sink to Lead Creepage Dist. = 4.8 mm Qgs (nC) 12 Dynamic dV/dt Rating Qgd (nC) 41 Low Thermal Resistance Lead (Pb)-free Av

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI7440G FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI7446G FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(