NTGD4169FT1G datasheet, подбор замены

 ..1. Size:130K  onsemi
 ntgd4169f ntgd4169ft1g.pdf 

NTGD4169F Power MOSFET and Schottky Diode 30 V, 2.9 A, N-Channel with Schottky Barrier Diode, TSOP-6 Features http //onsemi.com Fast Switching N-CHANNEL MOSFET Low Gate Change V(BR)DSS RDS(on) Max ID Max Low RDS(on) 90 mW @ 4.5 V 2.6 A Low VF Schottky Diode 30 V Independently Connected Devices to Provide Design Flexibility 125 mW @ 2.5 V 2.2 A This is

 7.1. Size:99K  onsemi
 ntgd4167c.pdf 

NTGD4167C Power MOSFET Complementary, 30 V, +2.9/-2.2 A, TSOP-6 Dual Features Complementary N-Channel and P-Channel MOSFET http //onsemi.com Small Size (3 x 3 mm) Dual TSOP-6 Package Leading Edge Trench Technology for Low On Resistance V(BR)DSS RDS(on) MAX ID MAX (Note 1) Reduced Gate Charge to Improve Switching Response 90 mW @ 4.5 V 2.6 A N-Ch Independently Co

 7.2. Size:67K  onsemi
 ntgd4161p-d ntgd4161pt1g.pdf 

NTGD4161P Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6 Features Fast Switching Speed Low Gate Charge http //onsemi.com Low RDS(on) Independently Connected Devices to Provide Design Flexibility V(BR)DSS RDS(on) Max This is a Pb-Free Device 160 mW @ -10 V Applications -30 V 280 mW @ -4.5 V Load Switch Battery Protection Portable Devices Like

 7.3. Size:2406K  cn vbsemi
 ntgd4161p.pdf 

NTGD4161P www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET - 20 2.7 nC 0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable A