Справочник MOSFET. NTGS4141NT1G

 

NTGS4141NT1G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTGS4141NT1G
   Маркировка: S4
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 12 nC
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 115 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
   Тип корпуса: TSOP-6

 Аналог (замена) для NTGS4141NT1G

 

 

NTGS4141NT1G Datasheet (PDF)

 ..1. Size:108K  onsemi
 ntgs4141nt1g.pdf

NTGS4141NT1G NTGS4141NT1G

NTGS4141NPower MOSFET30 V, 7.0 A, Single N-Channel, TSOP-6Features Low RDS(on) Low Gate Chargehttp://onsemi.com Pb-Free Package is AvailableApplications V(BR)DSS RDS(on) TYP ID MAX Load Switch21.5 mW @ 10 V Notebook PC30 V 7.0 A Desktop PC30 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)N-ChannelRating Symbol Value UnitDrain 1

 5.1. Size:202K  onsemi
 ntgs4141n nvgs4141n.pdf

NTGS4141NT1G NTGS4141NT1G

NTGS4141N, NVGS4141NMOSFET Power, Single,N-Channel, TSOP-630 V, 7.0 AFeatures Low RDS(on)http://onsemi.com Low Gate Charge NV Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) TYP ID MAXSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable21.5 mW @ 10 V Pb-Free Package is Available30 V 7.0 A30 mW @ 4.5

 5.2. Size:106K  onsemi
 ntgs4141n.pdf

NTGS4141NT1G NTGS4141NT1G

NTGS4141NPower MOSFET30 V, 7.0 A, Single N-Channel, TSOP-6Features Low RDS(on) Low Gate Chargehttp://onsemi.com Pb-Free Package is AvailableApplications V(BR)DSS RDS(on) TYP ID MAX Load Switch21.5 mW @ 10 V Notebook PC30 V 7.0 A Desktop PC30 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)N-ChannelRating Symbol Value UnitDrain 1

 8.1. Size:203K  onsemi
 ntgs4111p nvgs4111p.pdf

NTGS4141NT1G NTGS4141NT1G

NTGS4111P, NVGS4111PMOSFET Power, Single,P-Channel, TSOP-6-30 V, -4.7 AFeatureshttp://onsemi.com Leading -30 V Trench Process for Low RDS(on) Low Profile Package Suitable for Portable ApplicationsV(BR)DSS RDS(on) TYP ID MAX Surface Mount TSOP-6 Package Saves Board Space38 mW @ -10 V Improved Efficiency for Battery Applications-30 V -4.7 A68 mW @ -4.5 V

 8.2. Size:138K  onsemi
 ntgs4111p.pdf

NTGS4141NT1G NTGS4141NT1G

NTGS4111PPower MOSFET-30 V, -4.7 A, Single P-Channel, TSOP-6Features Leading -30 V Trench Process for Low RDS(on)http://onsemi.com Low Profile Package Suitable for Portable Applications Surface Mount TSOP-6 Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Improved Efficiency for Battery Applications38 mW @ -10 V Pb-Free Package is Available-30 V -4.7 A

 8.3. Size:134K  onsemi
 ntgs4111pt1.pdf

NTGS4141NT1G NTGS4141NT1G

NTGS4111PPower MOSFET-30 V, -4.7 A, Single P-Channel, TSOP-6Features Leading -30 V Trench Process for Low RDS(on)http://onsemi.com Low Profile Package Suitable for Portable Applications Surface Mount TSOP-6 Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Improved Efficiency for Battery Applications38 mW @ -10 V Pb-Free Package is Available-30 V -4.7 A

 8.4. Size:858K  cn vbsemi
 ntgs4111pt.pdf

NTGS4141NT1G NTGS4141NT1G

NTGS4111PTwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-

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