Справочник MOSFET. NTHS5402T1

 

NTHS5402T1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTHS5402T1
   Маркировка: A8
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 13 nC
   trⓘ - Время нарастания: 10 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
   Тип корпуса: CHIPFET

 Аналог (замена) для NTHS5402T1

 

 

NTHS5402T1 Datasheet (PDF)

 ..1. Size:200K  onsemi
 nths5402t1.pdf

NTHS5402T1 NTHS5402T1

NTHS5402T1Power MOSFETN-Channel ChipFETE4.9 Amps, 30 VoltsFeatureshttp://onsemi.com Low RDS(on) for Higher Efficiency Miniature ChipFET Surface Mount Package4.9 AMPSApplications Power Management in Portable and Battery-Powered Products; i.e., 30 VOLTSCellular and Cordless Telephones and PCMCIA CardsRDS(on) = 35 mWDMAXIMUM RATINGS (TA = 25C unless otherwise

 7.1. Size:106K  onsemi
 nths5404t1g.pdf

NTHS5402T1 NTHS5402T1

NTHS5404T1Power MOSFET20 V, 7.2 A, N-Channel ChipFETEFeatures Low RDS(on) for Higher Efficiencyhttp://onsemi.com Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available20 V 25 mW @ 4.5 V 7.2 AApplications Power Management in Portable and Battery-Powered Products; i.e.,Cellul

 7.2. Size:111K  onsemi
 nths5404t1.pdf

NTHS5402T1 NTHS5402T1

NTHS5404T1Power MOSFET20 V, 7.2 A, N-Channel ChipFETEFeatures Low RDS(on) for Higher Efficiencyhttp://onsemi.com Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available20 V 25 mW @ 4.5 V 7.2 AApplications Power Management in Portable and Battery-Powered Products; i.e.,Cellul

 8.1. Size:117K  onsemi
 nths5441.pdf

NTHS5402T1 NTHS5402T1

NTHS5441MOSFET Power,P-Channel, ChipFET-20 V, -5.3 AFeatureshttp://onsemi.com Low RDS(on) Higher Efficiency Extending Battery LifeV(BR)DSS RDS(on) TYP ID MAX Logic Level Gate Drive-20 V 46 mW @ -4.5 V -5.3 A Miniature ChipFET Surface Mount Package Pb-Free Package is AvailableSApplicationsG Power Management in Portable and Battery-Powered Pro

 8.2. Size:66K  onsemi
 nths5441pt1g nths5441t1g nths5441t1-d.pdf

NTHS5402T1 NTHS5402T1

NTHS5441Power MOSFET-20 V, -5.3 A, P-Channel ChipFET]Features Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate DriveV(BR)DSS RDS(on) TYP ID MAX Miniature ChipFET Surface Mount Package-20 V 46 mW @ -4.5 V -5.3 A Pb-Free Package is AvailableSApplications Power Management in Portable and Battery-Powered Products; i

 8.3. Size:200K  onsemi
 nths5445t1.pdf

NTHS5402T1 NTHS5402T1

NTHS5445T1Power MOSFETP-Channel ChipFETE5.2 Amps, 8 VoltsFeatureshttp://onsemi.com Low RDS(on) for Higher Efficiency Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board Space5.2 AMPS8 VOLTSApplications Power Management in Portable and Battery-Powered Products; i.e.,RDS(on) = 35 mWCellular and Cordless Telephones and PCMCIA CardsS

 8.4. Size:68K  onsemi
 nths5443t1-d nths5443t1.pdf

NTHS5402T1 NTHS5402T1

NTHS5443Power MOSFET-20 V, -4.9 A, P-Channel ChipFETtFeatures Low RDS(on) for Higher Efficiency Logic Level Gate Drive http://onsemi.com Miniature ChipFET Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is AvailableApplications -20 V 56 mW @ -4.5 -4.9 A Power Management in Portable and Battery-Powered Products; i.e.,Cellula

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top