Справочник MOSFET. NTHS5404T1G

 

NTHS5404T1G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTHS5404T1G
   Маркировка: A2
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 0.6 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 12 nC
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 337 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
   Тип корпуса: CHIPFET

 Аналог (замена) для NTHS5404T1G

 

 

NTHS5404T1G Datasheet (PDF)

 ..1. Size:106K  onsemi
 nths5404t1g.pdf

NTHS5404T1G NTHS5404T1G

NTHS5404T1Power MOSFET20 V, 7.2 A, N-Channel ChipFETEFeatures Low RDS(on) for Higher Efficiencyhttp://onsemi.com Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available20 V 25 mW @ 4.5 V 7.2 AApplications Power Management in Portable and Battery-Powered Products; i.e.,Cellul

 4.1. Size:111K  onsemi
 nths5404t1.pdf

NTHS5404T1G NTHS5404T1G

NTHS5404T1Power MOSFET20 V, 7.2 A, N-Channel ChipFETEFeatures Low RDS(on) for Higher Efficiencyhttp://onsemi.com Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available20 V 25 mW @ 4.5 V 7.2 AApplications Power Management in Portable and Battery-Powered Products; i.e.,Cellul

 7.1. Size:200K  onsemi
 nths5402t1.pdf

NTHS5404T1G NTHS5404T1G

NTHS5402T1Power MOSFETN-Channel ChipFETE4.9 Amps, 30 VoltsFeatureshttp://onsemi.com Low RDS(on) for Higher Efficiency Miniature ChipFET Surface Mount Package4.9 AMPSApplications Power Management in Portable and Battery-Powered Products; i.e., 30 VOLTSCellular and Cordless Telephones and PCMCIA CardsRDS(on) = 35 mWDMAXIMUM RATINGS (TA = 25C unless otherwise

 8.1. Size:117K  onsemi
 nths5441.pdf

NTHS5404T1G NTHS5404T1G

NTHS5441MOSFET Power,P-Channel, ChipFET-20 V, -5.3 AFeatureshttp://onsemi.com Low RDS(on) Higher Efficiency Extending Battery LifeV(BR)DSS RDS(on) TYP ID MAX Logic Level Gate Drive-20 V 46 mW @ -4.5 V -5.3 A Miniature ChipFET Surface Mount Package Pb-Free Package is AvailableSApplicationsG Power Management in Portable and Battery-Powered Pro

 8.2. Size:66K  onsemi
 nths5441pt1g nths5441t1g nths5441t1-d.pdf

NTHS5404T1G NTHS5404T1G

NTHS5441Power MOSFET-20 V, -5.3 A, P-Channel ChipFET]Features Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate DriveV(BR)DSS RDS(on) TYP ID MAX Miniature ChipFET Surface Mount Package-20 V 46 mW @ -4.5 V -5.3 A Pb-Free Package is AvailableSApplications Power Management in Portable and Battery-Powered Products; i

 8.3. Size:200K  onsemi
 nths5445t1.pdf

NTHS5404T1G NTHS5404T1G

NTHS5445T1Power MOSFETP-Channel ChipFETE5.2 Amps, 8 VoltsFeatureshttp://onsemi.com Low RDS(on) for Higher Efficiency Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board Space5.2 AMPS8 VOLTSApplications Power Management in Portable and Battery-Powered Products; i.e.,RDS(on) = 35 mWCellular and Cordless Telephones and PCMCIA CardsS

 8.4. Size:68K  onsemi
 nths5443t1-d nths5443t1.pdf

NTHS5404T1G NTHS5404T1G

NTHS5443Power MOSFET-20 V, -4.9 A, P-Channel ChipFETtFeatures Low RDS(on) for Higher Efficiency Logic Level Gate Drive http://onsemi.com Miniature ChipFET Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is AvailableApplications -20 V 56 mW @ -4.5 -4.9 A Power Management in Portable and Battery-Powered Products; i.e.,Cellula

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