NTHS5441PT1G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTHS5441PT1G
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.9 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 22 ns
Cossⓘ - Выходная емкость: 400 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
Тип корпуса: CHIPFET
- подбор MOSFET транзистора по параметрам
NTHS5441PT1G Datasheet (PDF)
nths5441pt1g nths5441t1g nths5441t1-d.pdf

NTHS5441Power MOSFET-20 V, -5.3 A, P-Channel ChipFET]Features Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate DriveV(BR)DSS RDS(on) TYP ID MAX Miniature ChipFET Surface Mount Package-20 V 46 mW @ -4.5 V -5.3 A Pb-Free Package is AvailableSApplications Power Management in Portable and Battery-Powered Products; i
nths5441.pdf

NTHS5441MOSFET Power,P-Channel, ChipFET-20 V, -5.3 AFeatureshttp://onsemi.com Low RDS(on) Higher Efficiency Extending Battery LifeV(BR)DSS RDS(on) TYP ID MAX Logic Level Gate Drive-20 V 46 mW @ -4.5 V -5.3 A Miniature ChipFET Surface Mount Package Pb-Free Package is AvailableSApplicationsG Power Management in Portable and Battery-Powered Pro
nths5445t1.pdf

NTHS5445T1Power MOSFETP-Channel ChipFETE5.2 Amps, 8 VoltsFeatureshttp://onsemi.com Low RDS(on) for Higher Efficiency Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board Space5.2 AMPS8 VOLTSApplications Power Management in Portable and Battery-Powered Products; i.e.,RDS(on) = 35 mWCellular and Cordless Telephones and PCMCIA CardsS
nths5443t1-d nths5443t1.pdf

NTHS5443Power MOSFET-20 V, -4.9 A, P-Channel ChipFETtFeatures Low RDS(on) for Higher Efficiency Logic Level Gate Drive http://onsemi.com Miniature ChipFET Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is AvailableApplications -20 V 56 mW @ -4.5 -4.9 A Power Management in Portable and Battery-Powered Products; i.e.,Cellula
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK3815 | SIHG47N60S | TPCP8003-H | 9N95 | GSM2324 | DMN3035LWN | HGI110N08AL
History: 2SK3815 | SIHG47N60S | TPCP8003-H | 9N95 | GSM2324 | DMN3035LWN | HGI110N08AL



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