NTJS4405NT4 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTJS4405NT4
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.63 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 4.7 ns
Cossⓘ - Выходная емкость: 22.4 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
Тип корпуса: SOT-363
Аналог (замена) для NTJS4405NT4
NTJS4405NT4 Datasheet (PDF)
ntjs4405nt1 ntjs4405nt4 nvjs4405n.pdf

NTJS4405N, NVJS4405NSmall Signal MOSFET25 V, 1.2 A, Single, N-Channel, SC-88Features Advance Planar Technology for Fast Switching, Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery LifeV(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJS4405N249 mW @ 4.5 V These Devices are Pb-Free and are RoHS Compliant25 V 1.2 A299 mW @ 2.7
ntjs4405n.pdf

NTJS4405NSmall Signal MOSFET25 V, 1.2 A, Single, N-Channel, SC-88Features Advance Planar Technology for Fast Switching, Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery LifeV(BR)DSS RDS(on) Typ ID Max Pb-Free Packages are Available249 mW @ 4.5 V25 V 1.2 AApplications299 mW @ 2.7 V Boost and Buck Converter Load Switch N-Channel Batt
ntjs4405n nvjs4405n.pdf

NTJS4405N, NVJS4405NMOSFET Single,N-Channel, Small Signal,SC-8825 V, 1.2 Ahttp://onsemi.comFeaturesV(BR)DSS RDS(on) Typ ID Max Advance Planar Technology for Fast Switching, Low RDS(on)249 mW @ 4.5 V Higher Efficiency Extending Battery Life25 V 1.2 A299 mW @ 2.7 V AEC-Q101 Qualified and PPAP Capable - NVJS4405N These Devices are Pb-Free and are RoHS Co
ntjs4151p ntjs4151pt1 ntjs4151pt1g.pdf

NTJS4151PTrench Power MOSFET-20 V, -4.2 A, Single P-Channel, SC-88Features Leading Trench Technology for Low RDS(ON) Extending Battery Life http://onsemi.com SC-88 Small Outline (2x2 mm) for Maximum Circuit BoardV(BR)DSS RDS(on) Typ ID MaxUtilization, Same as SC-70-647 mW @ -4.5 V Gate Diodes for ESD Protection-20 V 70 mW @ -2.5 V -4.2 A Pb-Free Package is Avai
Другие MOSFET... NTJS3151PT2 , NTJS3157NT1G , NTJS3157NT2 , NTJS3157NT4 , NTJS4151PT1 , NTJS4151PT1G , NTJS4160NT1G , NTJS4405NT1 , AO4468 , NTK3043NAT5G , NTK3043NT1G , NTK3134NT1G , NTK3139PT1G , NTK3142PT1G , NTLGF3402PT1G , NTLGF3501NT2G , NTLJD3119CTAG .
History: AOH3106 | SWT69N65K2F | STD30PF03L-1 | SI8499DB | PSMN1R1-40BS | 2SJ285
History: AOH3106 | SWT69N65K2F | STD30PF03L-1 | SI8499DB | PSMN1R1-40BS | 2SJ285



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