Справочник MOSFET. NTLUS4C12N

 

NTLUS4C12N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTLUS4C12N
   Маркировка: AG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.63 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 8.4 nC
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 546 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: UDFN6

 Аналог (замена) для NTLUS4C12N

 

 

NTLUS4C12N Datasheet (PDF)

 ..1. Size:79K  onsemi
 ntlus4c12n.pdf

NTLUS4C12N NTLUS4C12N

NTLUS4C12NPower MOSFET30 V, 10.7 A, Single N-Channel,2.0x2.0x0.55 mm mCoolt UDFN6 PackageFeatures Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving withwww.onsemi.comExposed Drain Pads for Excellent Thermal Conduction Ultra Low RDS(on) to Reduce Conduction LossesMOSFET Optimized Gate Charge to Reduce Switching LossesV(BR)DSS RDS(on) MAX ID MAX Low C

 6.1. Size:123K  onsemi
 ntlus4c16n.pdf

NTLUS4C12N NTLUS4C12N

NTLUS4C16NProduct PreviewPower MOSFET30 V, 11.7 A, Single N-Channel,1.6x1.6x0.55 mm mCoolt UDFN6 PackageFeatures www.onsemi.com UDFN Package with Exposed Drain Pads for Excellent ThermalMOSFETConductionV(BR)DSS RDS(on) MAX ID MAX Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving11.4 mW @ 10 V Ultra Low RDS(on)13.3 mW @ 4.5 V These Devices are Pb

 8.1. Size:115K  onsemi
 ntlus4930n.pdf

NTLUS4C12N NTLUS4C12N

NTLUS4930NPower MOSFET30 V, 6.1 A, Single N-Channel,2.0x2.0x0.55 mm mCoolt UDFN6 PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConduction Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving MOSFET Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses3

 9.1. Size:127K  onsemi
 ntlus3a39pztbg ntlus3a39pz ntlus3a39pztag.pdf

NTLUS4C12N NTLUS4C12N

NTLUS3A39PZPower MOSFET-20 V, -5.2 A, Single P-Channel, ESD,1.6x1.6x0.55 mm UDFN mCoolt PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConduction Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving MOSFET Ultra Low RDS(on)V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

 9.2. Size:133K  onsemi
 ntlus3a40pztag ntlus3a40pztbg.pdf

NTLUS4C12N NTLUS4C12N

NTLUS3A40PZPower MOSFET-20 V, -9.4 A, mCoolt Single P-Channel,ESD, 2.0x2.0x0.55 mm UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConductionMOSFET Low Profile UDFN 2.0x2.0x0.55 mm for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX Lowest RDS(on) in 2.0x2.0 Package ESD Protected 29 mW @ -4.5 V These Devices

 9.3. Size:139K  onsemi
 ntlus3a90pz.pdf

NTLUS4C12N NTLUS4C12N

NTLUS3A90PZPower MOSFET-20 V, -5.0 A, mCoolt Single P-Channel,ESD, 1.6x1.6x0.55 mm UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConductionMOSFET Low Profile UDFN 1.6x1.6x0.55 mm for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX Lowest RDS(on) in 1.6x1.6 Package ESD Protected 62 mW @ -4.5 V These Devices

 9.4. Size:143K  onsemi
 ntlus3a18pztbg ntlus3a18pztcg ntlus3a18pz ntlus3a18pztag.pdf

NTLUS4C12N NTLUS4C12N

NTLUS3A18PZPower MOSFET-20 V, -8.2 A, Single P-Channel,2.0x2.0x0.55 mm mCoolt UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent ThermalConduction http://onsemi.com Low Profile UDFN 2.0x2.0x0.55 mm for Board Space SavingMOSFET Ultra Low RDS(on)V(BR)DSS RDS(on) MAX ID MAX ESD Diode-Protected Gate18 mW @ -4.5 V These Devices are Pb-Fre

 9.5. Size:88K  onsemi
 ntlus3c18pz.pdf

NTLUS4C12N NTLUS4C12N

NTLUS3C18PZPower MOSFET-12 V, -7.0 A, mCoolt Single P-Channel,1.6x1.6x0.5 mm mCool UDFN6 PackageFeatureshttp://onsemi.com Ultra Low RDS(on) UDFN Package with Exposed Drain Pads for Excellent ThermalMOSFETConductionV(BR)DSS RDS(on) MAX ID MAX Low Profile UDFN 1.6 x 1.6 x 0.5 mm for Board Space Saving24 mW @ -4.5 V -7.0 A These Devices are Pb-Free, Halogen Fr

 9.6. Size:131K  onsemi
 ntlus3a90pztag ntlus3a90pztbg.pdf

NTLUS4C12N NTLUS4C12N

NTLUS3A90PZPower MOSFET-20 V, -5.0 A, mCoolt Single P-Channel,ESD, 1.6x1.6x0.55 mm UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConductionMOSFET Low Profile UDFN 1.6x1.6x0.55 mm for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX Lowest RDS(on) in 1.6x1.6 Package ESD Protected 62 mW @ -4.5 V These Devices

 9.7. Size:141K  onsemi
 ntlus3a40pz.pdf

NTLUS4C12N NTLUS4C12N

NTLUS3A40PZPower MOSFET-20 V, -9.4 A, mCoolt Single P-Channel,ESD, 2.0x2.0x0.65 mm UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConductionMOSFET Low Profile UDFN 2.0x2.0x0.65 mm for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX Lowest RDS(on) in 2.0x2.0 Package ESD Protected 29 mW @ -4.5 V These Devices

 9.8. Size:222K  onsemi
 ntlus3a18pz.pdf

NTLUS4C12N NTLUS4C12N

NTLUS3A18PZMOSFET Power, Single,P-Channel, UDFN,2.0x2.0x0.55 mm-20 V, -8.2 Awww.onsemi.comFeatures UDFN Package with Exposed Drain Pads for Excellent ThermalMOSFETConductionV(BR)DSS RDS(on) MAX ID MAX Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving18 mW @ -4.5 V Ultra Low RDS(on)25 mW @ -2.5 V-20 V -8.2 A ESD Diode-Protected Gate50 mW @

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