NTMD4N03 datasheet, подбор замены

 ..1. Size:116K  onsemi
 ntmd4n03 nvmd4n03.pdf 

NTMD4N03, NVMD4N03 Power MOSFET 4 A, 30 V, N-Channel SO-8 Dual Features Designed for use in low voltage, high speed switching applications Ultra Low On-Resistance Provides http //onsemi.com Higher Efficiency and Extends Battery Life - RDS(on) = 0.048 W, VGS = 10 V (Typ) - RDS(on) = 0.065 W, VGS = 4.5 V (Typ) VDSS RDS(ON) Typ ID Max Miniature SO-8 Surface Mount Package - S

 0.1. Size:156K  onsemi
 ntmd4n03r2.pdf 

NTMD4N03R2 Power MOSFET 4 Amps, 30 Volts N-Channel SO-8 Dual Features http //onsemi.com Designed for use in low voltage, high speed switching applications Ultra Low On-Resistance Provides VDSS RDS(ON) Typ ID Max Higher Efficiency and Extends Battery Life 30 V 48 mW @ VGS = 10 V 4.0 A - RDS(on) = 0.048 W, VGS = 10 V (Typ) - RDS(on) = 0.065 W, VGS = 4.5 V (Typ) Miniature S

 9.1. Size:135K  onsemi
 ntmd4820n.pdf 

 9.2. Size:135K  onsemi
 ntmd4840n.pdf 

NTMD4840N Power MOSFET 30 V, 7.5 A, Dual N-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 24 mW @ 10 V 30 V 7.5 A Applications

 9.3. Size:91K  onsemi
 ntmd4884nf ntmd4884nfr2g.pdf 

NTMD4884NF Power MOSFET and Schottky Diode 30 V, 5.7 A, Single N-Channel with 30 V, 2.8 A, Schottky Barrier Diode Features FETKYt Surface Mount Package Saves Board Space http //onsemi.com Independent Pin-Out for MOSFET and Schottky Allowing for Design Flexibility N-CHANNEL MOSFET Low RDS(on) MOSFET and Low VF Schottky to Minimize V(BR)DSS RDS(on) Max ID Max Conduction L

 9.4. Size:98K  onsemi
 ntmd4184pf ntmd4184pfr2g.pdf 

NTMD4184PF Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features FETKYt Surface Mount Package Saves Board Space http //onsemi.com Independent Pin-Out for MOSFET and Schottky Allowing for Design Flexibility P-CHANNEL MOSFET Low RDS(on) MOSFET and Low VF Schottky to Minimize V(BR)DSS RDS(on) Max ID Max Conduction