NTMFS4708NT1G - параметры транзистора MOSFET, его аналоги, datasheet

NTMFS4708NT1G Datasheet (PDF)

..1. Size:92K onsemi
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NTMFS4708NPower MOSFET30 V, 19 A, Single N-Channel, SOIC-8 FLFeatures Fast Switching Times Low Gate Chargehttp://onsemi.com Low RDS(on) Low Inductance SOIC-8 PackageV(BR)DSS RDS(on) Typ ID Max These are Pb-Free DevicesApplications7.3 mW @ 10 V30 V 19 A Notebooks, Graphics Cards10.1 mW @ 4.5 V DC-DC Converters Synchronous RectificationN

6.1. Size:125K onsemi
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NTMFS4707NPower MOSFET30 V, 17 A, Single N-Channel, SOIC-8 Flat LeadFeatures Fast Switching Timeshttp://onsemi.com Low Gate Charge Low RDS(on)V(BR)DSS RDS(on) Typ ID Max Low Inductance SOIC-8 Package These are Pb-Free Devices 10 mW @ 10 V30 V 17 A13.5 mW @ 4.5 VApplications Notebooks, Graphics Cards DC-DC ConvertersN-Channel Synchronou

6.2. Size:85K onsemi
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NTMFS4701NPower MOSFET30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead PackageFeatures Thermally and Electrically Enhanced Packaging Compatible withStandard SOIC-8http://onsemi.com New Package Provides Capability of Inspection and Probe AfterBoard MountingV(BR)DSS RDS(on) Typ ID Max Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG6.0 mW @ 10 V O

6.3. Size:127K onsemi
ntmfs4701nt1g.pdf pdf_icon

NTMFS4701NPower MOSFET30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead PackageFeatures Thermally and Electrically Enhanced Packaging Compatible withhttp://onsemi.comStandard SOIC-8 New Package Provides Capability of Inspection and Probe AfterBoard MountingV(BR)DSS RDS(on) Typ ID Max Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG6.0 mW @ 10 V30 V