NTMFS4744NT1G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTMFS4744NT1G
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.88 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 203 ns
Cossⓘ - Выходная емкость: 550 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
Тип корпуса: SO-8FL
Аналог (замена) для NTMFS4744NT1G
NTMFS4744NT1G Datasheet (PDF)
ntmfs4744nt1g.pdf

NTMFS4744NPower MOSFET30 V, 53 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications10 mW @ 10 V CPU Power Delivery 30 V 53 A14 mW @ 4.5 V DC-DC Conver
ntmfs4744n-d.pdf

NTMFS4744NPower MOSFET30 V, 53 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications10 mW @ 10 V CPU Power Delivery 30 V 53 A14 mW @ 4.5 V DC-DC Conver
ntmfs4707nt1g.pdf

NTMFS4707NPower MOSFET30 V, 17 A, Single N-Channel, SOIC-8 Flat LeadFeatures Fast Switching Timeshttp://onsemi.com Low Gate Charge Low RDS(on)V(BR)DSS RDS(on) Typ ID Max Low Inductance SOIC-8 Package These are Pb-Free Devices 10 mW @ 10 V30 V 17 A13.5 mW @ 4.5 VApplications Notebooks, Graphics Cards DC-DC ConvertersN-Channel Synchronou
ntmfs4701n.pdf

NTMFS4701NPower MOSFET30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead PackageFeatures Thermally and Electrically Enhanced Packaging Compatible withStandard SOIC-8http://onsemi.com New Package Provides Capability of Inspection and Probe AfterBoard MountingV(BR)DSS RDS(on) Typ ID Max Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG6.0 mW @ 10 V O
Другие MOSFET... NTMFS4108NT1G , NTMFS4119NT1G , NTMFS4120NT1G , NTMFS4121NT1G , NTMFS4122NT1G , NTMFS4701NT1G , NTMFS4707NT1G , NTMFS4708NT1G , IRFZ46N , NTMFS4821NT1G , NTMFS4823NT1G , NTMFS4825NFET1G , NTMFS4833NST1G , NTMFS4833NT1G , NTMFS4834NT1G , NTMFS4835NT1G , NTMFS4836NT1G .
History: SWT10N50K | BR20N50 | NCEP50P80AK | P0920BD | HMS28N65D | 10N65KG-TA3-T | HM50P02K
History: SWT10N50K | BR20N50 | NCEP50P80AK | P0920BD | HMS28N65D | 10N65KG-TA3-T | HM50P02K



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