NTMFS4744NT1G
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTMFS4744NT1G
Маркировка: 4744N
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.88
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 7
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 10
nC
trⓘ -
Время нарастания: 203
ns
Cossⓘ - Выходная емкость: 550
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01
Ohm
Тип корпуса:
SO-8FL
Аналог (замена) для NTMFS4744NT1G
NTMFS4744NT1G
Datasheet (PDF)
..1. Size:129K onsemi
ntmfs4744nt1g.pdf 
NTMFS4744NPower MOSFET30 V, 53 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications10 mW @ 10 V CPU Power Delivery 30 V 53 A14 mW @ 4.5 V DC-DC Conver
4.1. Size:87K onsemi
ntmfs4744n-d.pdf 
NTMFS4744NPower MOSFET30 V, 53 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications10 mW @ 10 V CPU Power Delivery 30 V 53 A14 mW @ 4.5 V DC-DC Conver
7.1. Size:125K onsemi
ntmfs4707nt1g.pdf 
NTMFS4707NPower MOSFET30 V, 17 A, Single N-Channel, SOIC-8 Flat LeadFeatures Fast Switching Timeshttp://onsemi.com Low Gate Charge Low RDS(on)V(BR)DSS RDS(on) Typ ID Max Low Inductance SOIC-8 Package These are Pb-Free Devices 10 mW @ 10 V30 V 17 A13.5 mW @ 4.5 VApplications Notebooks, Graphics Cards DC-DC ConvertersN-Channel Synchronou
7.2. Size:85K onsemi
ntmfs4701n.pdf 
NTMFS4701NPower MOSFET30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead PackageFeatures Thermally and Electrically Enhanced Packaging Compatible withStandard SOIC-8http://onsemi.com New Package Provides Capability of Inspection and Probe AfterBoard MountingV(BR)DSS RDS(on) Typ ID Max Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG6.0 mW @ 10 V O
7.3. Size:92K onsemi
ntmfs4708n ntmfs4708nt1g.pdf 
NTMFS4708NPower MOSFET30 V, 19 A, Single N-Channel, SOIC-8 FLFeatures Fast Switching Times Low Gate Chargehttp://onsemi.com Low RDS(on) Low Inductance SOIC-8 PackageV(BR)DSS RDS(on) Typ ID Max These are Pb-Free DevicesApplications7.3 mW @ 10 V30 V 19 A Notebooks, Graphics Cards10.1 mW @ 4.5 V DC-DC Converters Synchronous RectificationN
7.4. Size:127K onsemi
ntmfs4701nt1g.pdf 
NTMFS4701NPower MOSFET30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead PackageFeatures Thermally and Electrically Enhanced Packaging Compatible withhttp://onsemi.comStandard SOIC-8 New Package Provides Capability of Inspection and Probe AfterBoard MountingV(BR)DSS RDS(on) Typ ID Max Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG6.0 mW @ 10 V30 V
7.5. Size:85K onsemi
ntmfs4707n.pdf 
NTMFS4707NPower MOSFET30 V, 17 A, Single N-Channel, SOIC-8 Flat LeadFeatures Fast Switching Timeshttp://onsemi.com Low Gate Charge Low RDS(on) Low Inductance SOIC-8 PackageV(BR)DSS RDS(on) Typ ID Max These are Pb-Free Devices10 mW @ 10 V30 V 17 AApplications13.5 mW @ 4.5 V Notebooks, Graphics Cards DC-DC Converters Synchronous Rectific
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