NTMFS4839NT1G - параметры транзистора MOSFET, его аналоги, datasheet

NTMFS4839NT1G Datasheet (PDF)

..1. Size:109K onsemi
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NTMFS4839NPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V66 A9.5 mW @ 4.5

4.1. Size:139K onsemi
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NTMFS4839NPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V66 A9.5 mW @ 4.

4.2. Size:109K onsemi
ntmfs4839nht1g.pdf pdf_icon

NTMFS4839NHPower MOSFET30 V, 64 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Low RG These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V64 A

4.3. Size:139K onsemi
ntmfs4839nh.pdf pdf_icon

NTMFS4839NHPower MOSFET30 V, 64 A, Single N-Channel, SO-8FLFeatures Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Low RG These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V Refer to Application Note AND8195/D30 V64 A

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