NTMFS4841NT1G - Даташиты. Аналоги. Основные параметры
Наименование производителя: NTMFS4841NT1G
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.87 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 66.5 ns
Cossⓘ - Выходная емкость: 348 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
Тип корпуса: SO-8FL
Аналог (замена) для NTMFS4841NT1G
NTMFS4841NT1G Datasheet (PDF)
ntmfs4841nt1g.pdf
NTMFS4841NPower MOSFET30 V, 57 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V57 A11.4 mW @ 4.
ntmfs4841nh.pdf
NTMFS4841NHPower MOSFET30 V, 59 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Low RG These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V59 A
ntmfs4841n.pdf
NTMFS4841NPower MOSFET30 V, 57 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V57 A11.4 mW @ 4
ntmfs4841nht1g.pdf
NTMFS4841NHPower MOSFET30 V, 59 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Low RG These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V59 A
Другие MOSFET... NTMFS4834NT1G , NTMFS4835NT1G , NTMFS4836NT1G , NTMFS4837NHT1G , NTMFS4837NT1G , NTMFS4839NHT1G , NTMFS4839NT1G , NTMFS4841NHT1G , STP65NF06 , NTMFS4845NT1G , NTMFS4846NT1G , NTMFS4847NAT1G , NTMFS4847NT1G , NTMFS4849NT1G , NTMFS4851NT1G , NTMFS4852NT1G , NTMFS4854NST1G .
History: NVMFS5C670N | CS5N70U | HMS35DN10DA | NTMFS4845NT1G | AO7415 | 2SK3814-Z | BUK9K18-40E
History: NVMFS5C670N | CS5N70U | HMS35DN10DA | NTMFS4845NT1G | AO7415 | 2SK3814-Z | BUK9K18-40E
Список транзисторов
Обновления
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