NTMFS4846NT1G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTMFS4846NT1G
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.89 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12.7 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 34 ns
Cossⓘ - Выходная емкость: 562 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0034 Ohm
Тип корпуса: SO-8FL
Аналог (замена) для NTMFS4846NT1G
NTMFS4846NT1G Datasheet (PDF)
ntmfs4846nt1g.pdf

NTMFS4846NPower MOSFET30 V, 100 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V Refer to Application Not
ntmfs4846n.pdf

NTMFS4846NPower MOSFET30 V, 100 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V Refer to Application No
ntmfs4847nat1g ntmfs4847nt1g.pdf

NTMFS4847NPower MOSFET30 V, 85 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications4.1 mW @ 10 V Refer to Application Not
ntmfs4849nt1g.pdf

NTMFS4849NPower MOSFET30 V, 71 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications5.1 mW @ 10 V Refer to Application Note
Другие MOSFET... NTMFS4836NT1G , NTMFS4837NHT1G , NTMFS4837NT1G , NTMFS4839NHT1G , NTMFS4839NT1G , NTMFS4841NHT1G , NTMFS4841NT1G , NTMFS4845NT1G , MMIS60R580P , NTMFS4847NAT1G , NTMFS4847NT1G , NTMFS4849NT1G , NTMFS4851NT1G , NTMFS4852NT1G , NTMFS4854NST1G , NTMFS4897NFT1G , NTMFS4898NFT1G .
History: IRF720B | CEP6086 | ZXM62N03G | IXTK17N120L | BSC036NE7NS3G | CEB6086L | P6403FMG
History: IRF720B | CEP6086 | ZXM62N03G | IXTK17N120L | BSC036NE7NS3G | CEB6086L | P6403FMG



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