Справочник MOSFET. NTMFS5830NLT1G

 

NTMFS5830NLT1G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTMFS5830NLT1G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 28 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 32 ns
   Cossⓘ - Выходная емкость: 750 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm
   Тип корпуса: DFN5

 Аналог (замена) для NTMFS5830NLT1G

 

 

NTMFS5830NLT1G Datasheet (PDF)

 ..1. Size:103K  onsemi
 ntmfs5830nlt1g.pdf

NTMFS5830NLT1G NTMFS5830NLT1G

NTMFS5830NLPower MOSFET40 V, 172 A, 2.3 mWFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)2.3 mW @

 3.1. Size:113K  onsemi
 ntmfs5830nl.pdf

NTMFS5830NLT1G NTMFS5830NLT1G

NTMFS5830NLPower MOSFET40 V, 172 A, 2.3 mWFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)2.3 mW @

 6.1. Size:104K  onsemi
 ntmfs5834nlt1g.pdf

NTMFS5830NLT1G NTMFS5830NLT1G

NTMFS5834NL,NVMFS5834NLPower MOSFET40 V, 75 A, 9.3 mW, Single N-ChannelFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(ON) MAX ID MAX NVMF Prefix for Automotive and Other Applications Requiring9.3 mW @ 10 VUnique Site and Control Change Requirements; AEC-Q10140 V 75 AQualified and PPAP Capable13.6 mW @ 4.5 V

 6.2. Size:112K  onsemi
 ntmfs5834nl nvmfs5834nl.pdf

NTMFS5830NLT1G NTMFS5830NLT1G

NTMFS5834NL,NVMFS5834NLPower MOSFET40 V, 75 A, 9.3 mW, Single N-ChannelFeatures Low RDS(on) Low Capacitance http://onsemi.com Optimized Gate Charge NVMFS5834NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX NVMFS Prefix for Automotive and Other Applications Requiring9.3 mW @ 10 VUnique Site and Control Change Requirements; AEC-Q10140 V 75 A13.6

 6.3. Size:74K  onsemi
 ntmfs5834nl.pdf

NTMFS5830NLT1G NTMFS5830NLT1G

NTMFS5834NL,NVMFS5834NLPower MOSFET40 V, 75 A, 9.3 mW, Single N-ChannelFeatures Low RDS(on) Low Capacitance http://onsemi.com Optimized Gate Charge NVMFS5834NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX NVMFS Prefix for Automotive and Other Applications Requiring9.3 mW @ 10 VUnique Site and Control Change Requirements; AEC-Q10140 V 75 A13.6

 6.4. Size:107K  onsemi
 ntmfs5832nlt1g.pdf

NTMFS5830NLT1G NTMFS5830NLT1G

NTMFS5832NLPower MOSFET40 V, 111 A, 4.2 mWFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)4.2 mW @

 6.5. Size:116K  onsemi
 ntmfs5832nl.pdf

NTMFS5830NLT1G NTMFS5830NLT1G

NTMFS5832NLPower MOSFET40 V, 111 A, 4.2 mWFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)4.2 mW @

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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