NTMFS5830NLT1G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTMFS5830NLT1G
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 3.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 28 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 32 ns
Cossⓘ - Выходная емкость: 750 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm
Тип корпуса: DFN5
Аналог (замена) для NTMFS5830NLT1G
NTMFS5830NLT1G Datasheet (PDF)
ntmfs5830nlt1g.pdf

NTMFS5830NLPower MOSFET40 V, 172 A, 2.3 mWFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)2.3 mW @
ntmfs5830nl.pdf

NTMFS5830NLPower MOSFET40 V, 172 A, 2.3 mWFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)2.3 mW @
ntmfs5834nlt1g.pdf

NTMFS5834NL,NVMFS5834NLPower MOSFET40 V, 75 A, 9.3 mW, Single N-ChannelFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(ON) MAX ID MAX NVMF Prefix for Automotive and Other Applications Requiring9.3 mW @ 10 VUnique Site and Control Change Requirements; AEC-Q10140 V 75 AQualified and PPAP Capable13.6 mW @ 4.5 V
ntmfs5834nl nvmfs5834nl.pdf

NTMFS5834NL,NVMFS5834NLPower MOSFET40 V, 75 A, 9.3 mW, Single N-ChannelFeatures Low RDS(on) Low Capacitance http://onsemi.com Optimized Gate Charge NVMFS5834NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX NVMFS Prefix for Automotive and Other Applications Requiring9.3 mW @ 10 VUnique Site and Control Change Requirements; AEC-Q10140 V 75 A13.6
Другие MOSFET... NTMFS4C09NT1G , NTMFS4C10N , NTMFS4C13N , NTMFS4C35N , NTMFS4H01N , NTMFS4H01NF , NTMFS4H02N , NTMFS4H02NF , 2N7000 , NTMFS5832NLT1G , NTMFS5834NLT1G , NTMFS5844NLT1G , NTMFS5C404NL , NTMFS5C404NLT , NTMFS5C410NL , NTMFS5C410NLT , NTMFS5C423NL .
History: PSMN5R0-100PS | VBE1638 | MMQ60R115PTH | AUIRFSL8403 | PH6325L | HTJ600N06
History: PSMN5R0-100PS | VBE1638 | MMQ60R115PTH | AUIRFSL8403 | PH6325L | HTJ600N06



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
irfp360 | bc108 equivalent | irfp4568 | mj15004 | ksc2073 | nte102a | tip31cg | s9015 transistor