NTMFS5C442NLT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTMFS5C442NLT
Маркировка: 5C442L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 3.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 27 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 23 nC
trⓘ - Время нарастания: 72 ns
Cossⓘ - Выходная емкость: 1100 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
Тип корпуса: DFN5
Аналог (замена) для NTMFS5C442NLT
NTMFS5C442NLT Datasheet (PDF)
ntmfs5c442nlt.pdf
NTMFS5C442NLTPower MOSFET40 V, 2.8 mW, 127 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com NTMFS5C442NLTWF - Wettable Flank Option for EnhancedOptical InspectionV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Com
ntmfs5c442nlt1g.pdf
NTMFS5C442NLPower MOSFET40 V, 2.5 mW, 130 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.5 mW @ 10 V40
ntmfs5c442nl.pdf
NTMFS5C442NLPower MOSFET40 V, 2.8 mW, 121 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseshttp://onsemi.com These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)2.8 mW @ 10 V
ntmfs5c442nt3g.pdf
NTMFS5C442NPower MOSFET40 V, 2.3 mW, 140 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Va
ntmfs5c442n.pdf
NTMFS5C442NPower MOSFET40 V, 2.3 mW, 140 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Va
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F