NTP5411NG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTP5411NG
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 166 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 122 ns
Cossⓘ - Выходная емкость: 615 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
Тип корпуса: TO-220
NTP5411NG Datasheet (PDF)
ntb5411nt4g ntp5411ng.pdf
NTB5411N, NTP5411NPower MOSFET80 Amps, 60 VoltsN-Channel D2PAK, TO-220Featureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX Avalanche Energy SpecifiedV(BR)DSS RDS(ON) MAX (Note 1) These are Pb-Free Devices60 V 10 mW @ 10 V 80 AApplications LED Lighting and LED Backlight Drivers DC-DC ConvertersN-Channel DC Motor DriversD
ntb5411n ntp5411n.pdf
NTB5411N, NTP5411NPower MOSFET80 Amps, 60 VoltsN-Channel D2PAK, TO-220Featureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX Avalanche Energy SpecifiedV(BR)DSS RDS(ON) MAX (Note 1) These are Pb-Free Devices60 V 10 mW @ 10 V 80 AApplications LED Lighting and LED Backlight Drivers DC-DC ConvertersN-Channel DC Motor DriversD
ntb5412nt4g ntb5412n ntp5412n ntp5412ng.pdf
NTB5412N, NTP5412NPower MOSFET60 Amps, 60 VoltsN-Channel D2PAK, TO-220Featureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX Avalanche Energy SpecifiedV(BR)DSS RDS(ON) MAX (Note 1) These are Pb-Free Devices60 V 14 mW @ 10 V 60 AApplications LED Lighting and LED Backlight Drivers DC-DC ConvertersN-Channel DC Motor DriversD
ntb5404n ntp5404n.pdf
NTB5404N, NTP5404NPower MOSFET40 V, 136 A, Single N-Channel, D2PAK &TO-220Features Low RDS(on) http://onsemi.com High Current CapabilityID MAX Low Gate ChargeV(BR)DSS RDS(ON) TYP (Note 1) This is a Pb-Free Device40 V 3.5 mW @ 10 V 136 AApplicationsD Electronic Brake Systems Electronic Power SteeringN-Channel Bridge CircuitsGMAXIMUM RATI
ntb5404nt4g ntp5404nrg.pdf
NTB5404N, NTP5404N,NVB5404NPower MOSFET40 V, 167 A, Single N-Channel, D2PAK &TO-220Features Low RDS(on)http://onsemi.com High Current CapabilityID MAX Low Gate ChargeV(BR)DSS RDS(ON) MAX (Note 1) AEC-Q101 Qualified and PPAP Capable - NVB5404N40 V 4.5 mW @ 10 V 167 A These Devices are Pb-Free and are RoHS CompliantApplicationsD Electronic Brake
ntb5426nt4g ntb5426n ntp5426n ntp5426ng.pdf
NTB5426N, NTP5426NPower MOSFET120 Amps, 60 VoltsN-Channel D2PAK, TO-220Featureshttp://onsemi.com Low RDS(on) High Current Capability Avalanche Energy SpecifiedID MAXV(BR)DSS RDS(ON) MAX (Note 1) These are Pb-Free Devices60 V 6.0 mW @ 10 V 120 AApplications Power Supplies ConvertersN-Channel Power Motor ControlsD Bridge CircuitsMAXI
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918