Справочник MOSFET. NTTFS4C10N

 

NTTFS4C10N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTTFS4C10N
   Маркировка: 4C10
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.79 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 9.7 nC
   trⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 574 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0074 Ohm
   Тип корпуса: WDFN8

 Аналог (замена) для NTTFS4C10N

 

 

NTTFS4C10N Datasheet (PDF)

 ..1. Size:109K  onsemi
 nttfs4c10n.pdf

NTTFS4C10N NTTFS4C10N

NTTFS4C10NPower MOSFET30 V, 44 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications7.4 mW @ 10 V DC-DC Converters

 0.1. Size:118K  1
 nttfs4c10ntag.pdf

NTTFS4C10N NTTFS4C10N

NTTFS4C10NPower MOSFET30 V, 44 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant7.4 mW @ 10 VApplications30 V 44 A11 mW @ 4.5

 6.1. Size:78K  onsemi
 nttfs4c13n.pdf

NTTFS4C10N NTTFS4C10N

NTTFS4C13NPower MOSFET30 V, 38 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications9.4 mW @ 10 V CPU Power Delive

 7.1. Size:121K  1
 nttfs4c05ntag.pdf

NTTFS4C10N NTTFS4C10N

NTTFS4C05NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantApplicationsV(BR)DSS RDS(on) MAX ID MAX DC-DC Converters3.6 mW @ 10 V

 7.2. Size:119K  1
 nttfs4c25ntag.pdf

NTTFS4C10N NTTFS4C10N

NTTFS4C25NPower MOSFET30 V, 27 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications17 mW @ 10 V DC-DC Converters

 7.3. Size:119K  onsemi
 nttfs4c06n.pdf

NTTFS4C10N NTTFS4C10N

NTTFS4C06NPower MOSFET30 V, 67 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant4.2 mW @ 10 VApplications30 V 67 A6.1 mW @

 7.4. Size:206K  onsemi
 nttfs4c02n.pdf

NTTFS4C10N NTTFS4C10N

NTTFS4C02NMOSFET Power, Single,N-Channel, m8FL30 V, 170 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2.25 mW @ 10 V30 V 170 AApplications3.1

 7.5. Size:115K  onsemi
 nttfs4c25n.pdf

NTTFS4C10N NTTFS4C10N

NTTFS4C25NPower MOSFET30 V, 27 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications17 mW @ 10 V DC-DC Converters

 7.6. Size:112K  onsemi
 nttfs4c05n.pdf

NTTFS4C10N NTTFS4C10N

NTTFS4C05NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications3.6 mW @ 10 V DC-DC Converters

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History: HY3810P

 

 
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