NTTFS4H07N
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTTFS4H07N
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.64
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 18.5
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 32
ns
Cossⓘ - Выходная емкость: 525
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0048
Ohm
Тип корпуса:
WDFN8
- подбор MOSFET транзистора по параметрам
NTTFS4H07N
Datasheet (PDF)
..1. Size:80K onsemi
nttfs4h07n.pdf 
NTTFS4H07NPower MOSFET25 V, 66 A, Single N-Channel, m8-FLFeatures Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performancehttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantVGS MAX RDS(on) TYP QGTOTApplications Hi
6.1. Size:82K onsemi
nttfs4h05n nttfs4h05ntag.pdf 
NTTFS4H05NPower MOSFET25 V, 94 A, Single N-Channel, m8-FLFeatures Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performancehttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantApplicationsVGS MAX RDS(on) TYP QGTOT Hi
6.2. Size:204K onsemi
nttfs4h05n.pdf 
NTTFS4H05NMOSFET Power, Single,N-Channel, m8-FL25 V, 94 AFeatures Optimized Design to Minimize Conduction and Switching Losseswww.onsemi.com Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSVGS MAX RDS(on) TYP QGTOTCompliant4.5 V 4.8 mW 8.7
8.1. Size:121K 1
nttfs4c05ntag.pdf 
NTTFS4C05NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantApplicationsV(BR)DSS RDS(on) MAX ID MAX DC-DC Converters3.6 mW @ 10 V
8.2. Size:119K 1
nttfs4c25ntag.pdf 
NTTFS4C25NPower MOSFET30 V, 27 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications17 mW @ 10 V DC-DC Converters
8.3. Size:128K 1
nttfs4928ntag.pdf 
NTTFS4928NMOSFET Power, Single,N-Channel, m8FL30 V, 37 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses9.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS30 V 37 ACompliant13.5 mW @ 4.5 V
8.4. Size:118K 1
nttfs4c10ntag.pdf 
NTTFS4C10NPower MOSFET30 V, 44 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant7.4 mW @ 10 VApplications30 V 44 A11 mW @ 4.5
8.5. Size:195K onsemi
nttfs4932n.pdf 
NTTFS4932NMOSFET Power, Single,N-Channel, m8FL30 V, 79 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.0 mW @ 10 V30 V 79 ACompliant5.5 mW @ 4.5 VA
8.6. Size:113K onsemi
nttfs4932ntag.pdf 
NTTFS4932NPower MOSFET30 V, 79 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications4.0 mW @ 10 V30 V 79 A Low-S
8.7. Size:106K onsemi
nttfs4823ntag.pdf 
NTTFS4823NPower MOSFET30 V, 50 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant10.5 mW @ 10 V30 V 50 AApplications17.5 mW @
8.8. Size:116K onsemi
nttfs4929ntag.pdf 
NTTFS4929NPower MOSFET30 V, 34 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant11 mW @ 10 VApplications30 V 34 A17 mW @ 4.
8.9. Size:127K onsemi
nttfs4930n.pdf 
NTTFS4930NPower MOSFET30 V, 23 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications23 mW @ 10 V30 V 23 A DC-DC
8.10. Size:111K onsemi
nttfs4939n-d.pdf 
NTTFS4939NPower MOSFET30 V, 52 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications5.5 mW @ 10 V30 V 52 A Low-S
8.11. Size:111K onsemi
nttfs4941n.pdf 
NTTFS4941NPower MOSFET30 V, 46 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications6.2 mW @ 10 V30 V 46 A Low-S
8.12. Size:119K onsemi
nttfs4c06n.pdf 
NTTFS4C06NPower MOSFET30 V, 67 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant4.2 mW @ 10 VApplications30 V 67 A6.1 mW @
8.13. Size:122K onsemi
nttfs4928n.pdf 
NTTFS4928NPower MOSFET30 V, 37 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant9.0 mW @ 10 VApplications30 V 37 A13.5 mW @
8.14. Size:105K onsemi
nttfs4824n.pdf 
NTTFS4824NPower MOSFET30 V, 69 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant5.0 mW @ 10 V30 V 69 AApplications7.5 mW @ 4
8.15. Size:112K onsemi
nttfs4941ntag.pdf 
NTTFS4941NPower MOSFET30 V, 46 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications6.2 mW @ 10 V30 V 46 A Low-S
8.16. Size:194K onsemi
nttfs4937n.pdf 
NTTFS4937NMOSFET Power, Single,N-Channel, m8FL30 V, 75 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.5 mW @ 10 V30 V 75 ACompliant7.0 mW @ 4.5 VA
8.17. Size:206K onsemi
nttfs4c02n.pdf 
NTTFS4C02NMOSFET Power, Single,N-Channel, m8FL30 V, 170 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2.25 mW @ 10 V30 V 170 AApplications3.1
8.18. Size:193K onsemi
nttfs4939n.pdf 
NTTFS4939NMOSFET Power, Single,N-Channel, m8FL30 V, 52 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.5 mW @ 10 V30 V 52 ACompliant8.0 mW @ 4.5 VA
8.19. Size:111K onsemi
nttfs4928ntag.pdf 
NTTFS4928NPower MOSFET30 V, 37 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant9.0 mW @ 10 VApplications30 V 37 A13.5 mW @
8.20. Size:106K onsemi
nttfs4824ntag.pdf 
NTTFS4824NPower MOSFET30 V, 69 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant5.0 mW @ 10 V30 V 69 AApplications7.5 mW @ 4
8.21. Size:111K onsemi
nttfs4939ntag.pdf 
NTTFS4939NPower MOSFET30 V, 52 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications5.5 mW @ 10 V30 V 52 A Low-S
8.22. Size:111K onsemi
nttfs4943n-d.pdf 
NTTFS4943NPower MOSFET30 V, 41 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications7.2 mW @ 10 V30 V 41 A DC-DC
8.23. Size:115K onsemi
nttfs4c25n.pdf 
NTTFS4C25NPower MOSFET30 V, 27 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications17 mW @ 10 V DC-DC Converters
8.24. Size:127K onsemi
nttfs4929n.pdf 
NTTFS4929NPower MOSFET30 V, 34 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant11 mW @ 10 VApplications30 V 34 A17 mW @ 4.
8.25. Size:116K onsemi
nttfs4930ntag.pdf 
NTTFS4930NPower MOSFET30 V, 23 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications23 mW @ 10 V30 V 23 A DC-DC
8.26. Size:109K onsemi
nttfs4945n.pdf 
NTTFS4945NPower MOSFET30 V, 34 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant9.0 mW @ 10 VApplications30 V 34 A Power
8.27. Size:78K onsemi
nttfs4c13n.pdf 
NTTFS4C13NPower MOSFET30 V, 38 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications9.4 mW @ 10 V CPU Power Delive
8.28. Size:111K onsemi
nttfs4840n.pdf 
NTTFS4840NPower MOSFET30 V, 26 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications24 mW @ 10 V DC-DC Converters
8.29. Size:106K onsemi
nttfs4821ntag.pdf 
NTTFS4821NPower MOSFET30 V, 57 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant7.0 mW @ 10 V30 V 57 AApplications10.8 mW @
8.30. Size:112K onsemi
nttfs4932n-d.pdf 
NTTFS4932NPower MOSFET30 V, 79 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications4.0 mW @ 10 V30 V 79 A Low-S
8.31. Size:111K onsemi
nttfs4937n-d.pdf 
NTTFS4937NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications4.5 mW @ 10 V30 V 75 A Low-S
8.32. Size:116K onsemi
nttfs4985nf.pdf 
NTTFS4985NFPower MOSFET30 V, 64 A, Single N-Channel, WDFN8Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant3.5 mW @ 10 V30 V 64 AApplications
8.33. Size:105K onsemi
nttfs4821n.pdf 
NTTFS4821NPower MOSFET30 V, 57 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant7.0 mW @ 10 V30 V 57 AApplications10.8 mW @
8.34. Size:105K onsemi
nttfs4823n.pdf 
NTTFS4823NPower MOSFET30 V, 50 A, Single N-Channel, m8FLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant10.5 mW @ 10 V30 V 50 AApplications17.5 mW @
8.35. Size:109K onsemi
nttfs4c10n.pdf 
NTTFS4C10NPower MOSFET30 V, 44 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications7.4 mW @ 10 V DC-DC Converters
8.36. Size:112K onsemi
nttfs4937ntag.pdf 
NTTFS4937NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications4.5 mW @ 10 V30 V 75 A Low-S
8.37. Size:112K onsemi
nttfs4c05n.pdf 
NTTFS4C05NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications3.6 mW @ 10 V DC-DC Converters
8.38. Size:111K onsemi
nttfs4800n-d.pdf 
NTTFS4800NPower MOSFET30 V, 32 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications20 mW @ 10 V DC-DC Converters
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