AO4400. Аналоги и основные параметры
Наименование производителя: AO4400
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 3 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 97 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
Тип корпуса: SOIC-8
Аналог (замена) для AO4400
- подборⓘ MOSFET транзистора по параметрам
AO4400 даташит
..1. Size:372K aosemi
ao4400.pdf 
July 2001 AO4400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4400 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and ID = 8.5A operation with gate voltages as low as 2.5V. This RDS(ON)
9.1. Size:332K aosemi
ao4407c.pdf 
AO4407C 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V)
9.2. Size:378K aosemi
ao4405.pdf 
AO4405 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ID (at VGS=-10V) -6A suitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)
9.3. Size:561K aosemi
ao4404b.pdf 
AO4404B 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=10V) 8.5A with gate voltages as low as 2.5V. This device makes an RDS(ON) (at VGS=10V)
9.4. Size:275K aosemi
ao4402.pdf 
AO4402 20V N-Channel MOSFET General Description Product Summary VDS 20V The AO4402 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=4.5V) 20A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)
9.5. Size:207K aosemi
ao4407a.pdf 
AO4407A 30V P-Channel MOSFET General Description Product Summary The AO4407A uses advanced trench technology to VDS = -30V provide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -20V) with a 25V gate rating. This device is suitable for use as RDS(ON)
9.6. Size:369K aosemi
ao4403.pdf 
AO4403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -6A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)
9.7. Size:343K aosemi
ao4402g.pdf 
AO4402G 20V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)
9.8. Size:328K aosemi
ao4406a.pdf 
AO4406A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO4406A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 13A This device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)
9.9. Size:340K aosemi
ao4407.pdf 
AO4407 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4407 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-20V) -12A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-20V)
9.10. Size:398K aosemi
ao4405e.pdf 
AO4405E 30V P-Channel MOSFET General Description Product Summary VDS -30V Trench Power LV (P-ch) MOSFET technology Low RDS(ON) ID (at VGS=-10V) -6A Low Gate Charge RDS(ON) (at VGS=-10V)
9.11. Size:302K aosemi
ao4409.pdf 
AO4409 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -15A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)
9.12. Size:2524K kexin
ao4405.pdf 
SMD Type MOSFET P-Channel MOSFET AO4405 (KO4405) SOP-8 Features VDS (V) =-30V ID =-6 A (VGS =-10V) 1.50 0.15 RDS(ON) 50m (VGS =-10V) RDS(ON) 85m (VGS =-4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D D G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30
9.13. Size:2214K kexin
ao4404b.pdf 
SMD Type MOSFET N-Channel MOSFET AO4404B (KO4404B) SOP-8 Features VDS (V) = 30V ID = 8.5 A (VGS = 10V) 1.50 0.15 RDS(ON) 24m (VGS = 10V) RDS(ON) 30m (VGS = 4.5V) 1 Source 5 Drain RDS(ON) 48m (VGS = 2.5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D D G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra
9.14. Size:1484K kexin
ao4402.pdf 
SMD Type MOSFET N-Channel MOSFET AO4402 (KO4402) SOP-8 Features VDS (V) = 20V ID = 20 A (VGS = 4.5V) 1.50 0.15 RDS(ON) 5.5m (VGS = 4.5V) RDS(ON) 7m (VGS = 2.5V) 1 Source 5 Drain 6 Drain 2 Source D 7 Drain 3 Source 8 Drain 4 Gate G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gat
9.15. Size:1244K kexin
ao4404.pdf 
SMD Type MOSFET N-Channel MOSFET AO4404 (KO4404) SOP-8 Features VDS (V) = 30V ID = 8.5 A (VGS = 10V) 1.50 0.15 RDS(ON) 24m (VGS = 10V) RDS(ON) 30m (VGS = 4.5V) 1 Source 5 Drain RDS(ON) 48m (VGS = 2.5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit
9.16. Size:1643K kexin
ao4407a.pdf 
SMD Type MOSFET P-Channel MOSFET AO4407A (KO4407A) SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V) 1.50 0.15 RDS(ON) 11m (VGS =-20V) RDS(ON) 13m (VGS =-10V) 1 Source 5 Drain RDS(ON) 17m (VGS =-6V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Dr
9.17. Size:1498K kexin
ao4406.pdf 
SMD Type MOSFET N-Channel MOSFET AO4406 (KO4406) SOP-8 Features VDS (V) = 30V D ID = 11.5 A (VGS = 10V) 1.50 0.15 RDS(ON) 14m (VGS = 10V) RDS(ON) 16.5m (VGS = 4.5V) 1 Source 5 Drain 6 Drain RDS(ON) 26m (VGS = 2.5V) 2 Source 7 Drain 3 Source G 8 Drain 4 Gate S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit
9.18. Size:1374K kexin
ao4403.pdf 
SMD Type MOSFET P-Channel MOSFET AO4403 (KO4403) SOP-8 Features VDS (V) =-30V ID =-6 A (VGS =-10V) 1.50 0.15 RDS(ON) 48m (VGS =-10V) RDS(ON) 57m (VGS =-4.5V) 1 Source 5 Drain RDS(ON) 80m (VGS =-2.5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Dr
9.19. Size:1564K kexin
ao4408.pdf 
SMD Type MOSFET N-Channel MOSFET AO4408 (KO4408) SOP-8 Features VDS (V) = 30V ID = 12 A (VGS = 10V) RDS(ON) 13m (VGS = 10V) 1.50 0.15 RDS(ON) 16m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-
9.20. Size:1723K kexin
ao4406a.pdf 
SMD Type MOSFET N-Channel MOSFET AO4406A (KO4406A) SOP-8 Features VDS (V) = 30V ID = 13 A (VGS = 10V) RDS(ON) 11.5m (VGS = 10V) 1.50 0.15 RDS(ON) 15.5m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V
9.21. Size:2315K kexin
ao4407.pdf 
SMD Type MOSFET P-Channel MOSFET AO4407 SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V) 1.50 0.15 RDS(ON) 13m (VGS =-20V) D RDS(ON) 14m (VGS =-10V) D 1 Source 5 Drain RDS(ON) 30m (VGS =-5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drai
9.22. Size:1350K kexin
ao4409.pdf 
SMD Type MOSFET P-Channel MOSFET AO4409 (KO4409) SOP-8 Features VDS (V) =-30V ID =-15 A (VGS =-10V) RDS(ON) 7.5m (VGS =-10V) 1.50 0.15 RDS(ON) 12m (VGS =-4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gat
9.23. Size:1565K cn vbsemi
ao4405.pdf 
AO4405 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top Vi
9.24. Size:1701K cn vbsemi
ao4404.pdf 
AO4404 www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-8
9.25. Size:830K cn vbsemi
ao4407a.pdf 
AO4407A www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PCs
9.26. Size:833K cn vbsemi
ao4406.pdf 
AO4406 www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-8
9.27. Size:833K cn vbsemi
ao4408.pdf 
AO4408 www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-8
9.28. Size:833K cn vbsemi
ao4406a.pdf 
AO4406A www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-
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History: RUC002N05HZGT116
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