3N60AF - описание и поиск аналогов

 ..1. Size:415K  nell
 3n60af 3n60f 3n60g.pdf 

RoHS 3N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (3A, 600Volts) DESCRIPTION D The Nell 3N60 is a three-terminal silicon D device with current conduction capability of 3A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. G They are designed for use in applications such

 0.1. Size:366K  nell
 13n60a 13n60af.pdf 

RoHS 13N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 13A, 600Volts DESCRIPTION The Nell 13N60 is a three-terminal silicon device with current conduction capability of D 13A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as s

 9.1. Size:644K  1
 hgtd3n60a4s hgt1s3n60a4s hgtp3n60a4.pdf 

 9.2. Size:677K  1
 hgt1s3n60a4ds hgtp3n60a4d.pdf 

 9.3. Size:257K  onsemi
 hgtd3n60a4s hgtp3n60a4.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.4. Size:377K  utc
 3n60a.pdf 

UNISONIC TECHNOLOGIES CO., LTD 3N60A Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching app

 9.5. Size:342K  wuxi china
 cs3n60a3.pdf 

Silicon N-Channel Power MOSFET R CS3N60 A3 General Description VDSS 600 V CS3N60 A3 the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit