3N80A - описание и поиск аналогов

RoHS 3N80 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (3A, 800Volts) DESCRIPTION The Nell 3N80 is a three-terminal silicon device with current conduction capability of 3A, fast switching speed, low on-state resistance, D breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. such as sw

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 3.800 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 3.800 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 3.800 (Typ.) 1 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

July 2022 BVDSS = 800 V RDS(on) Typ = 3.5 HFS3N80A ID = 3.0 A 800V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 20 nC (Typ.) Extended Safe Opera

Silicon N-Channel Power MOSFET R CS3N80 A8 General Description VDSS 800 V CS3N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25 ) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

Silicon N-Channel Power MOSFET R CS3N80 A4 General Description VDSS 800 V CS3N80 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25 ) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET R CS3N80 A3 General Description VDSS 800 V CS3N80 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25 ) 75 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 4.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

SFP120N80A,SFB120N80A SFP066N80AC3,SFB063N80AC3 N-MOSFET 80V, 5.5m , 120A Features Product Summary Enhancement Mode VDS 80V Very Low On-Resistance RDS(on) 5.5m Fast Switching ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100