3SK296 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 3SK296
Маркировка: ZQ-
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.025 A
Tjⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 0.9 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 50 Ohm
Тип корпуса: SC82A
- подбор MOSFET транзистора по параметрам
3SK296 Datasheet (PDF)
3sk296.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
3sk294.pdf

3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit: mm Superior cross modulation performance Low reverse transfer capacitance: C = 20 fF (typ.) rss Low noise figure: NF = 1.4dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 12.5 V
3sk293.pdf

3SK293 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK293 TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance Low reverse transfer capacitance: C = 16 fF (typ.) rss Low noise figure: NF = 1.5dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 12.5 V
3sk291.pdf

3SK291 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK291 TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance Low reverse transfer capacitance: C = 0.016 pF (typ.) rss Low noise figure: NF = 1.5dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 12.
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: CS16N65W | CSD18537NKCS | 2N7281
History: CS16N65W | CSD18537NKCS | 2N7281



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