6N60AF - описание и поиск аналогов

 ..1. Size:457K  nell
 6n60a 6n60af 6n60f 6n60g.pdf 

RoHS 6N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (6A, 600Volts) DESCRIPTION The Nell 6N60 is a three-terminal silicon D D device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. G They are designed for use in applications such

 0.1. Size:474K  nell
 16n60a 16n60af 16n60b.pdf 

RoHS 16N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (16A, 600Volts) DESCRIPTION The Nell 16N60 is a three-terminal silicon device with current conduction capability of 16A, D fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. such a

 9.1. Size:149K  international rectifier
 irfib6n60a.pdf 

PD - 91813 SMPS MOSFET IRFIB6N60A HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 0.75W 5.5A l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized

 9.2. Size:198K  international rectifier
 irfib6n60apbf.pdf 

PD - 94838 SMPS MOSFET IRFIB6N60APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 0.75 5.5A l High speed power switching l High Voltage Isolation = 2.5KVRMS l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness G

 9.3. Size:139K  vishay
 irfib6n60a sihfib6n60a.pdf 

IRFIB6N60A, SiHFIB6N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 0.75 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 49 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Qgd (nC) 20 Avalanche Voltage and Current Confi

 9.4. Size:141K  vishay
 sihfib6n60a.pdf 

IRFIB6N60A, SiHFIB6N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 0.75 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 49 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Qgd (nC) 20 Avalanche Voltage and Current Confi

 9.5. Size:163K  ixys
 ixzr16n60a ixzr16n60b.pdf 

IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement Mode N-Channel Enhancement Mode Switch Mode RF MOSFET Low Qg and Rg Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V High dv/dt Optimized for RF Operation Nanosecond Switching Ideal for Class C, D, & E Applications ID25 = 18 A Symbol Test Conditions Maximum Ratings RDS(on) 0.56

 9.6. Size:220K  ixys
 ixgp36n60a3.pdf 

Preliminary Technical Information IXGA36N60A3 VCES = 600V GenX3TM 600V IGBT IXGP36N60A3 IC110 = 36A IXGH36N60A3 VCE(sat) 1.4V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E (TAB) VCES TC = 25 C to 150 C 600 V TO-220 (IXGP) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGE

 9.7. Size:63K  ixys
 ixtm6n60 ixtm6n60a ixtp6n60 ixtp6n60a.pdf 

 9.8. Size:175K  ixys
 ixgh56n60a3.pdf 

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGH56N60A3 IC110 = 56A VCE(sat) 1.35V Ultra-Low Vsat PT IGBT for up to 5 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G CD ES (TAB) VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector

 9.9. Size:220K  ixys
 ixgh36n60a3.pdf 

Preliminary Technical Information IXGA36N60A3 VCES = 600V GenX3TM 600V IGBT IXGP36N60A3 IC110 = 36A IXGH36N60A3 VCE(sat) 1.4V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E (TAB) VCES TC = 25 C to 150 C 600 V TO-220 (IXGP) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGE

 9.10. Size:196K  ixys
 ixgh36n60a3d4.pdf 

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGH36N60A3D4 with Diode IC110 = 36A VCE(sat) 1.4V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC1

 9.11. Size:220K  ixys
 ixga36n60a3.pdf 

Preliminary Technical Information IXGA36N60A3 VCES = 600V GenX3TM 600V IGBT IXGP36N60A3 IC110 = 36A IXGH36N60A3 VCE(sat) 1.4V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E (TAB) VCES TC = 25 C to 150 C 600 V TO-220 (IXGP) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGE

 9.12. Size:457K  trinnotech
 tman16n60a.pdf 

TMAN16N60A N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A

 9.13. Size:618K  trinnotech
 tmp16n60a tmpf16n60a.pdf 

TMP16N60A(G)/TMPF16N60A(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A

 9.14. Size:426K  wuxi china
 cs16n60a8h.pdf 

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 9.15. Size:319K  wuxi china
 cs6n60a3ty.pdf 

Silicon N-Channel Power MOSFET R CS6N60 A3TY General Description VDSS 600 V CS6N60 A3TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 9.16. Size:422K  wuxi china
 cs6n60a4ty.pdf 

Silicon N-Channel Power MOSFET R CS6N60 A4TY General Description VDSS 600 V CS6N60 A4TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 9.17. Size:231K  wuxi china
 cs6n60a3d.pdf 

Silicon N-Channel Power MOSFET R CS6N60 A3D General Description VDSS 600 V CS6N60 A3D, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 9.18. Size:351K  wuxi china
 cs6n60a4d.pdf 

Silicon N-Channel Power MOSFET R CS6N60 A4D General Description VDSS 600 V CS6N60 A4D, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 9.19. Size:275K  inchange semiconductor
 irfib6n60a.pdf 

iscN-Channel MOSFET Transistor IRFIB6N60A FEATURES Low drain-source on-resistance RDS(ON) =0.75 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL