9N90C - описание и поиск аналогов

 ..1. Size:381K  nell
 9n90b 9n90c.pdf 

RoHS 9N90 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 9A, 900Volts DESCRIPTION D The Nell 9N90 is a three-terminal silicon device with current conduction capability of 9A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as G G D

 0.1. Size:799K  fairchild semi
 fqa9n90c.pdf 

July 2007 QFET FQA9N90C 900V N-Channel MOSFET Features Description 9A, 900V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 45 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 14pF) This advanced technology has been especially tailored to Fa

 0.2. Size:804K  fairchild semi
 fqa9n90c f109.pdf 

 0.3. Size:840K  fairchild semi
 fqpf9n90ct.pdf 

TM QFET FQP9N90C/FQPF9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.0 A, 900V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45nC) planar stripe, DMOS technology. Low Crss ( typical 14pF) This advanced technology has been especially tailored to

 0.4. Size:842K  fairchild semi
 fqp9n90c fqpf9n90c.pdf 

TM QFET FQP9N90C/FQPF9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.0 A, 900V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45nC) planar stripe, DMOS technology. Low Crss ( typical 14pF) This advanced technology has been especially tailored to

 0.5. Size:2910K  onsemi
 fqa9n90c f109.pdf 

April 2014 FQA9N90C_F109 N-Channel QFET MOSFET 900 V, 9 A, 1.4 Features Description 9 A, 900 V, RDS(on) = 1.4 (Max.) @ VGS = 10 V, ID = 4.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar Low Gate Charge (Typ. 45 nC) stripe and DMOS technology. This advanced MOSFET Low Crss . 14 pF) technology

 0.6. Size:1200K  onsemi
 fqp9n90c fqpf9n90c.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.7. Size:311K  taiwansemi
 tsm9n90cn.pdf 

TSM9N90CN 900V N-Channel Power MOSFET TO-3PN PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 900 1.4 @ VGS =10V 9.5 General Description The TSM9N90CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

 0.8. Size:419K  taiwansemi
 tsm9n90ci tsm9n90cz.pdf 

TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 900 1.4 @ VGS =10V 9 General Description The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

 0.9. Size:60K  ape
 ap09n90cw-hf.pdf 

AP09N90CW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Minimize On-resistance D BVDSS 900V Fast Switching RDS(ON) 1.4 Simple Drive Requirement ID 7.6A G RoHS Compliant & Halogen-Free S Description AP09N90C provides minimize on-state resistance , superior switching performance and high efficiency switching power su

 0.10. Size:217K  ape
 ap09n90cw.pdf 

AP09N90CW-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Minimize On-resistance D BVDSS 900V Fast Switching RDS(ON) 1.4 Simple Drive Requirement ID 7.6A G RoHS Compliant & Halogen-Free S Description AP09N90C series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible

 0.11. Size:563K  jiaensemi
 jfpc9n90c jffm9n90c.pdf 

JFPC9N90C JFFM9N90C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURES LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SU

 0.12. Size:167K  maple semi
 slw9n90c.pdf 

This Power MOSFET is produced using Maple semi s - 9A, 900V, RDS(on) = 1.05 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 70 nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superior switching Fast switching minimize on state r

 0.13. Size:624K  silicon standard
 ssm09n90cgw.pdf 

SSM09N90CGW N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM09N90CGW acheives fast switching performance BVDSS 900V with low gate charge without a complex drive circuit. It is RDS(ON) 1.4 suitable for high voltage applications such as AC/DC converters and offline power supplies. I 7.6A D The SSM09N90CGW is in a TO-247 (TO-3P) package, Pb-free; RoHS-com

 0.14. Size:1844K  cn scilicon
 sfp049n90c3 sfb046n90c3.pdf 

SFP049N90C3,SFB046N90C3 N-MOSFET 90V, 3.9m , 120A Features Product Summary Extremely low on-resistance RDS(on) VDS 90V Excellent QgxRDS(on) product(FOM) RDS(on) 3.9m Qualified according to JEDEC criteria ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies) SFP049N90

 0.15. Size:232K  inchange semiconductor
 fqpf9n90c.pdf 

isc N-Channel MOSFET Transistor FQPF9N90C DESCRIPTION RDS(on) = 1.4 @VGS = 10 V, ID = 4 A Fast Switching Speed 100% Avalanche Tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 900 V DS