Справочник MOSFET. AMD530C

 

AMD530C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AMD530C
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 36 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 4 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
   Тип корпуса: TO-252AD-5
     - подбор MOSFET транзистора по параметрам

 

AMD530C Datasheet (PDF)

 ..1. Size:140K  analog power
amd530c.pdfpdf_icon

AMD530C

Analog Power AMD530CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 45 @ V = 2.5V 29GS30converters and power management in portable and 35 @ V = 4.5V 36GS

 9.1. Size:140K  analog power
amd532c.pdfpdf_icon

AMD530C

Analog Power AMD532CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 95 @ V = 2.5V 20GS30converters and power management in portable and 59 @ V = 4.5V 24GS

 9.2. Size:234K  analog power
amd533ce.pdfpdf_icon

AMD530C

Analog Power AMD533CEP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 45 @ V = 4.5V 29GS30converters and power management in portable and 35 @ V = 10V 36GS

 9.3. Size:79K  analog power
amd534c.pdfpdf_icon

AMD530C

Analog Power AMD534CP & N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m) ID (A)(rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 39 @ V = 4.5V 30GS30converters and power management in portable and 29 @ V = 10V 36G

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: RFP50N05L | IXFN32N120P | 2SK3611-01MR | IXFV96N20P | AP9575GH | STD12N05T4 | NTMFS4925NE

 

 
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