Справочник MOSFET. AUIRF7640S2TR

 

AUIRF7640S2TR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AUIRF7640S2TR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 7.3 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 160 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.036 Ohm
   Тип корпуса: DIRECTFET

 Аналог (замена) для AUIRF7640S2TR

 

 

AUIRF7640S2TR Datasheet (PDF)

 ..1. Size:303K  international rectifier
 auirf7640s2tr.pdf

AUIRF7640S2TR AUIRF7640S2TR

PD -97551AUIRF7640S2TRAUTOMOTIVE GRADEAUIRF7640S2TR1DirectFET Power MOSFET Advanced Process Technology Optimized for Class D Audio Amplifier and High SpeedV(BR)DSS60VSwitching ApplicationsRDS(on) typ.27m Low Rds(on) for Improved Efficiencymax. 36m Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI RG (typical)

 6.1. Size:218K  international rectifier
 auirf7647s2tr1.pdf

AUIRF7640S2TR AUIRF7640S2TR

PD - 97537AAUIRF7647S2TRAUTOMOTIVE GRADEAUIRF7647S2TR1DirectFET Power MOSFET Advanced Process TechnologyV(BR)DSS100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved EfficiencyRDS(on) typ.26m Low Qg for Better THD and Improved Efficiencymax. 31m Low Qrr for Better THD and Lower EMIRG (typical)1.6 Low Par

 6.2. Size:288K  international rectifier
 auirf7648m2tr1.pdf

AUIRF7640S2TR AUIRF7640S2TR

PD - 96317BAUIRF7648M2TRAUTOMOTIVE GRADEAUIRF7648M2TR1 Automotive DirectFET Power MOSFET V(BR)DSS60V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.5.5mother Heavy Load Applicationsmax. 7.0m Exceptionally Small Footprint and Low Profile High Power DensityID (Silicon Limited)68A Low Parasitic Para

 6.3. Size:429K  infineon
 auirf7647s2tr.pdf

AUIRF7640S2TR AUIRF7640S2TR

AUTOMOTIVE GRADE AUIRF7647S2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency RDS(on) typ. 26m Low Qg for Better THD and Improved Efficiency max. 31m Low Qrr for Better THD and Lower EMI RG (typical) 1.6 Low Parasiti

 6.4. Size:432K  infineon
 auirf7648m2tr.pdf

AUIRF7640S2TR AUIRF7640S2TR

AUTOMOTIVE GRADE AUIRF7648M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 60V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 5.5m Exceptionally Small Footprint and Low Profile max. 7.0m High Power Density ID (Silicon Limited) 68A Low Parasitic Parameters Qg (typic

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