AUIRFN8459 - параметры транзистора MOSFET, его аналоги, datasheet

AUIRFN8459 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: AUIRFN8459
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.9 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 40 nC
   trⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 340 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0059 Ohm
   Тип корпуса: PQFN

Аналог (замена) для AUIRFN8459

AUIRFN8459 Datasheet (PDF)

..1. Size:741K international rectifier
auirfn8459.pdf

AUTOMOTIVE GRADE AUIRFN8459 Features VDSS 40V Advanced Process Technology RDS(on) typ. 4.8m Dual N-Channel MOSFET Ultra Low On-Resistance 5.9mmax 175C Operating Temperature ID (Silicon Limited) 70A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 50A Lead-Free, RoHS Compliant Automot

..2. Size:534K infineon
auirfn8459.pdf

AUTOMOTIVE GRADE AUIRFN8459 Features VDSS 40V Advanced Process Technology RDS(on) typ. 4.8m Dual N-Channel MOSFET Ultra Low On-Resistance 5.9m max 175C Operating Temperature ID (Silicon Limited) 70A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 50A Lead-Free, RoHS Compliant Automotive

5.1. Size:735K international rectifier
auirfn8458.pdf

AUTOMOTIVE GRADE AUIRFN8458 Features VDSS 40V Advanced Process Technology Dual N-Channel MOSFETRDS(on) typ. 8.0m Ultra Low On-Resistance max10m 175C Operating Temperature Fast SwitchingID Repetitive Avalanche Allowed up to Tjmax 43A (@TC (Bottom) = 25C Lead-Free, RoHS Compliant Automotive Qualified * Description Spe

5.2. Size:735K infineon
auirfn8458.pdf

6.1. Size:561K 1
auirfn8405tr.pdf

AUTOMOTIVE GRADE AUIRFN8405 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 1.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 2.0m Lead-Free, RoHS Compliant ID (Silicon Limited) 187A Automotive Qualified *

6.2. Size:609K international rectifier
auirfn8401.pdf

AUTOMOTIVE GRADE AUIRFN8401 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 3.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 4.6m Lead-Free, RoHS Compliant ID (Silicon Limited) 84A Automotive Qualified * De

6.3. Size:576K international rectifier
auirfn8405.pdf

6.4. Size:606K international rectifier
auirfn8403.pdf

AUTOMOTIVE GRADE AUIRFN8403 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) typ. 2.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 3.3m Lead-Free, RoHS Compliant ID (Silicon Limited) 123A Automotive Qualified *

6.5. Size:611K infineon
auirfn8401.pdf