AUIRFR8405 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AUIRFR8405
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 163 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 80 ns
Cossⓘ - Выходная емкость: 770 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00198 Ohm
Тип корпуса: TO-252
Аналог (замена) для AUIRFR8405
AUIRFR8405 Datasheet (PDF)
auirfr8405 auirfu8405.pdf
AUIRFR8405AUTOMOTIVE GRADE AUIRFU8405Features HEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) typ. 1.65ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax max. 1.98ml Lead-Free, RoHS Compliantl Automotive Qualified *ID (Silicon Limited) 211ADescriptionSpecifically designed for A
auirfr8405 auirfu8405.pdf
AUIRFR8405 AUTOMOTIVE GRADE AUIRFU8405 Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.65m New Ultra Low On-Resistance max. 1.98m 175C Operating Temperature ID (Silicon Limited) 211A Fast Switching ID (Package Limited) 100A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive
auirfr8401 auirfu8401.pdf
AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 HEXFET Power MOSFET Features VDSS 40V D Advanced Process Technology New Ultra Low On-Resistance RDS(on) typ. 3.2m175C Operating Temperature 4.25mG max Fast Switching ID (Silicon Limited) 100A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID
auirfr8403 auirfu8403.pdf
AUIRFR8403AUIRFU8403AUTOMOTIVE GRADEFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDVDSS 40Vl New Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ. 2.4ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax max. 3.1mGl Lead-Free, RoHS CompliantID (Silicon Limited) 127Al Automotive Qualified *DescriptionSID (Package L
auirfr8401 auirfu8401.pdf
AUIRFR8401 AUTOMOTIVE GRADE AUIRFU8401 Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V New Ultra Low On-Resistance 175C Operating Temperature RDS(on) typ. 3.2m Fast Switching max. 4.25m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 100A Lead-Free, RoHS Compliant ID (Package Limited) 100A
auirfr8403 auirfu8403.pdf
AUIRFR8403 AUTOMOTIVE GRADE AUIRFU8403 Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V New Ultra Low On-Resistance 175C Operating Temperature RDS(on) typ. 2.4m Fast Switching max. 3.1m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 127A Lead-Free, RoHS Compliant ID (Package Limited) 100A
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918